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Ferroelectric three-bit memory and preparation method thereof, and operation method thereof

A technology of ferroelectric storage and operation method, which is applied in the field of ferroelectric storage, can solve problems such as the complexity of multi-value storage technology, and achieve the effect of improving process stability and storage density

Active Publication Date: 2019-11-08
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current multi-value storage technology is still relatively complex and needs to be improved.

Method used

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  • Ferroelectric three-bit memory and preparation method thereof, and operation method thereof
  • Ferroelectric three-bit memory and preparation method thereof, and operation method thereof
  • Ferroelectric three-bit memory and preparation method thereof, and operation method thereof

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Embodiment Construction

[0037] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. This embodiment is carried out on the premise of the technical solution of the present invention, and detailed implementation and specific operation process are given, but the protection scope of the present invention is not limited to the following embodiments.

[0038] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0039]In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memory is not limited to the embodiment shown in the figure. out direction.

[0040] The ferr...

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Abstract

The invention relates to a ferroelectric three-bit memory and a preparation method thereof, and an operation method thereof. The ferroelectric three-bit memory comprises a ferroelectric thin film layer, a ferroelectric memory unit and a read / write electrode layer, wherein the ferroelectric memory unit is arranged on the ferroelectric thin film layer, the read / write electrode layer is divided intotwo parts by a gap to form a first electrode and a second electrode, and the length of at least one of the first electrode and the second electrode lapped joint on the surface of the ferroelectric memory unit is larger than 0, and is smaller than the width of the ferroelectric memory unit. Compared with the prior art, the ferroelectric three-bit memory has a three-bit information memory function,can improve the storage density of the memory unit, and is simple to prepare and low in cost.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a design and operation method of a ferroelectric multi-bit memory based on electric domain wall conduction, in particular to a three-bit memory unit and an electrode structure ferroelectric which can realize high-current readout Electric memory, method of preparation and method of operation thereof. Background technique [0002] Traditional ferroelectric memory uses two polarization states of ferroelectric materials to realize non-volatile two-bit information storage. In recent years, members of this research team have invented a new type of ferroelectric memory by using the principle of domain wall conduction in insulating ferroelectric materials (Chinese patent application numbers CN201510036526.X, CN201510036586.1, CN201610098138.9 and US Patent Publication No. 9685216B2). The above invention proposes a current readout mechanism that is different fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11507H01L27/11509G11C11/22H10B53/30H10B53/40
CPCG11C11/2273G11C11/2275H10B53/40H10B53/30
Inventor 江安全汪超柴晓杰江钧
Owner FUDAN UNIV