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Memory and data processing method

A technology for storing data and data processing, which is applied in the field of semiconductors, can solve the problems of high manufacturing cost of resistive variable memory, achieve the effect of reducing circuit complexity and chip area, reducing manufacturing cost, and improving safety and reliability

Active Publication Date: 2022-04-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the manufacturing cost of the existing RRAM is relatively high

Method used

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0044] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

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Abstract

Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to a memory and a data processing method. The memory includes a main array, a first setting array and a second setting array, wherein the first setting array and the second setting array are respectively arranged in the first setting area and the second setting area, so that the The first set array and the second set array are close to the main array, so that the first set array, the second set array and the main array are located in the same physical storage area, and there is no need for the first set array and the second set array Divide the physical storage area separately, so that the first set array and the second set array can share the decoder and read circuit with the main array, and there is no need to separately configure the decoder for the first set array and the second set array and read circuit, which reduces circuit complexity and chip area, and makes full use of limited chip resources, thereby reducing the manufacturing cost of the resistive variable memory.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a memory and a data processing method. Background technique [0002] Resistive Random Access Memory (RRAM) is a new type of non-volatile memory, which has a wide range of applications in embedded applications and stand-alone applications. However, the manufacturing cost of the existing RRAM is relatively high. Contents of the invention [0003] In order to at least overcome the above-mentioned deficiencies in the prior art, one object of the present invention is to provide a memory and a data processing method. [0004] An embodiment of the present invention provides a memory, including: a main array, a first setting array and a second setting array; [0005] The first set array is arranged in the first set area, and the first set array is close to the first edge of the main array; [0006] The second set array is arranged in the second set area, and the secon...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00
CPCG11C13/0002G11C13/0023G11C13/004
Inventor 张君宇刘璟吕杭炳张锋刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI