High-efficiency gan power module for powering led lights

Abstract

The invention belongs to the technical field of power electronics, and specifically relates to a high-efficiency GaN power supply module for powering LED lights, including an input filter module, a GaN PFC power factor correction module and a GaN half-bridge LLC converter module. The present invention adopts input filtering + two-stage isolated DC-DC converter topology selection is more flexible, and can achieve higher performance; the high frequency of the power module is realized by using LGA-packaged GaN HEMT devices; a double-sided layout structure is adopted Optimizing the design of the gate drive circuit, HEMT devices, power bus, and heat dissipation layout improves reliability, enabling high-density power integration and high efficiency. The present invention can be widely used in vehicle-mounted DC-DC converter systems for providing power supply for LED lighting systems, and can also be widely used in high-density power modules using GaN power devices for power integration.

Description

technical field [0001] The invention relates to a novel high-efficiency GaN power supply module used for power supply of LED vehicle lamps, belonging to the technical field of automotive electronics. Background technique [0002] In recent years, due to the deterioration of environmental pollution and the gradual decline of air quality, people have paid more and more attention to electric vehicles. The government has issued a series of relevant policies to encourage the development of the electric vehicle industry, such as increasing subsidies for the purchase of electric vehicles, ensuring that electric vehicles are given priority in licensing, and actively promoting the construction of electric vehicle infrastructure to achieve full coverage of charging piles. Solve the problem of difficult charging of electric vehicles. Faced with the promulgation of various supporting policies, major companies have also increased investment in research and development of electric vehicl...

AI Technical Summary

Problems solved by technology

[0011] However, to improve the power density by increasing the switching frequency, we need to face two bottleneck problems: one is that the current of the switching branch changes very rapidly and the di / dt is very high during the switching process of the GaN device. Parasitic inductance, when the current changes rapidly, can generate high spike overvoltage across the switching device

If the wiring is not optimized enough and the parasitic inductance is large, it will directly affect the normal operation of the circuit

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