Radar ranging method, device and terminal device

Abstract

The invention belongs to the technical field of radars and provides a radar ranging method, a radar ranging device and a terminal device. The method comprises the following steps that: the reference zero point pulse width time of zero point signals, and acquisition durations and pulse width time corresponding to first reflection signals under a plurality of optical intensities are acquired; a radar ranging formula is determined according to the reference zero point pulse width time, and the acquisition durations and pulse width time corresponding to the various light intensities; the target acquisition duration and target pulse width time of a target object as well as the current zero point pulse width time and current zero point acquisition duration of current zero point signals are acquired within preset time; and a distance from the target object to a radar is calculated according to the radar ranging formula. According to the radar ranging method, a zero point position is set; thereflection signals of the zero point position and the reflection signals of the target object can be acquired within the preset time; the delay influence of temperature on a circuit within the presettime is nearly the same; and therefore, distance calculation can be performed according to target zero point signals and target reflection signals, and the influence of the temperature on the delay ofthe circuit is eliminated.

Description

technical field [0001] The invention belongs to the technical field of radar, and in particular relates to a radar ranging method, device and terminal equipment. Background technique [0002] Because the laser has the characteristics of good directionality, high brightness, and good monochromaticity, the laser detection has a relatively high resolution and has significant advantages in ranging, precision tracking, and detection. [0003] However, semiconductor lasers and semiconductor optoelectronic devices are greatly affected by ambient temperature, and changes in temperature will directly affect the output characteristics of semiconductor devices. The general temperature compensation method is the temperature compensation avalanche tube bias technology, which makes the bias voltage of the avalanche tube change with the change of the ambient temperature, and keeps the signal-to-noise ratio of the entire receiving channel in a relatively ideal state. However, the influence...

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a radar ranging method, device and ter

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