Double-hinge type electrostatic suspension probe structure

An electrostatic levitation and hinged technology, applied in optics, instruments, optomechanical equipment, etc., can solve problems such as the inability to balance the gravity of the suspended probe, the deformation of the hinge, and the inability to guarantee the verticality of the probe and the hinge in a free state. Make up for angular deflection and mechanical rigidity requirements, and achieve high photolithographic precision

Inactive Publication Date: 2019-11-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This single-hinge clamping structure cannot guarantee the perpendicularity between the probe and the hinge in a free state, and is far from being able to balance the gravity of the suspended probe, resulting in deformation of the hinge

Method used

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  • Double-hinge type electrostatic suspension probe structure
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  • Double-hinge type electrostatic suspension probe structure

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Embodiment Construction

[0016] specific implementation plan

[0017] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but the scope of protection of the present invention is not limited to the following embodiments.

[0018] Such as figure 1 , 2 , 3, and 4, when the lithography machine is not working, the suspended probe (103) will make the suspended probe (103) balance and rest on the silicon wafer under the action of the amphoteric hinge layer (102) and its own gravity And there are micro-pitch positions, and in a static state, the position of the suspended probe (103) is zero at this time. Before the photolithography machine is used, the suspension probe (103) is pre-leveled by using the ring common electrode (305), so that the suspension probe (103) is balanced at the initial working position. The five degrees of freedom ...

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Abstract

Aiming at probe suspension of a certain photoetching machine, the present invention provides a double-hinge type electrostatic suspension probe structure, so that electrostatic suspension of a probe of a certain photoetching machine and a silicon wafer at the bottom of a photoetching machine is achieved under the assistance of a double-elastic hinge layer. The double-hinge type electrostatic suspension probe structure comprises a photoetching probe, an upper electrode layer, a lower electrode layer, a middle double-hinge layer and a suspension control system, the upper electrode layer and thelower electrode layer are identical in structure and comprise common electrodes and control electrodes, electrostatic force is applied through the upper electrode layer and the lower electrode layer,under the assistance of the middle double-hinge layer, the four movement freedom degrees of x, y, [theta] and [phi] of the probe are restrained, the suspension position can be adjusted in the z direction, and electrostatic suspension of the probe is achieved.

Description

technical field [0001] The invention relates to a certain and non-contact local photolithography field, and specifically proposes a double-hinge electrostatic suspension probe structure, which enables the suspension probe to achieve electrostatic suspension with the silicon wafer at the bottom of the photolithography machine under the assistance of the double-hinge structure. Background technique [0002] With the increasingly important role in the development of levitation technology, in order to solve the difficulties brought by the limitation of resolution to lithography technology, people began to seek new lithography technology and invented non-contact lithography technology. [0003] At present, in order to keep the deflection angle of the probe stable during the scanning process and the amount of runout is small, mechanical structures such as adaptive hinges that suppress the deflection angle are mainly used. Using this method, in the photolithography process, only the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70691G03F7/7085
Inventor 王皓望凯力王广平曹宇吕嗣鸿
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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