Check patentability & draft patents in minutes with Patsnap Eureka AI!

One-time programmable memory with variable storage capacity

A technology of storage capacity and memory, which is applied in the field of one-time programmable memory, can solve the problems of wasting alternative storage units, etc., and achieve the effects of improving chip yield, saving chip area, and enhancing chip applicability

Pending Publication Date: 2019-12-03
GALAXYCORE SHANGHAI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the OTP programming yield rate is low, you can choose to program different memory units A to achieve the purpose of multiple programming to improve the chip yield rate. However, when the OTP programming yield rate is high, there are more alternatives. Storage cells create unnecessary waste

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-time programmable memory with variable storage capacity
  • One-time programmable memory with variable storage capacity
  • One-time programmable memory with variable storage capacity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In the following detailed description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings show, by way of example, specific embodiments in which the invention can be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments in accordance with the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not limiting, and the scope of the invention is defined by the appended claims.

[0023] Figure 4 An OTP memory with a variable storage capacity according to an embodiment of the present invention is shown, and the OTP memory includes a plurality of storage units and a plurality of address bits. It is enough to ensure a high chip yield by only configuring fewer candidate memory cells

[002...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a one-time programmable memory with variable storage capacity. The one-time programmable memory comprises: a plurality of storage units and a plurality of address bits; and a control circuit which is used for configuring the corresponding relation between the address bits and the storage units according to the burning yield. According to the one-time programmable memory withvariable storage capacity, the control circuit configures the corresponding relationship between the address bit and the storage unit according to the burning yield; when the burning yield is unknownor low, more alternative storage units are configured to achieve the purpose of improving the chip yield through multiple times of burning, and when the burning yield is high, fewer alternative storage units are configured to avoid unnecessary waste, improve the storage capacity, save the chip area, reduce the manufacturing cost and enhance the chip applicability.

Description

technical field [0001] The invention relates to a one-time programmable memory with variable storage capacity. Background technique [0002] In the chip manufacturing process, due to the influence of various factors such as machine parameters and temperature distribution, there will be different degrees of parameter drift between chips, such as oscillator frequency, reference voltage or current value and the design value. This will lead to inconsistency problems in the application process of the chip, which will affect the product yield, such as the deviation of the camera effect caused by the camera module, the difference in the driving voltage of different LCD panels, etc. Therefore, it is necessary to correct the specific parameters of the chip, and Store the corrected value into the register, read and correct these parameters after the chip is powered on, so as to improve the consistency problem and improve the product yield. This function is usually implemented using O...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C17/18
CPCG11C17/18
Inventor 苗英豪王富中
Owner GALAXYCORE SHANGHAI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com