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Gallium oxide-based Schottky diode and preparation method thereof

A Schottky diode, gallium oxide-based technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low average electric field strength in the drift region, device breakdown voltage limitation, etc.

Active Publication Date: 2019-12-10
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

[0004] The terminal protection measures using field plates can only improve the problem of electric field concentration at the positive edge of the device, and achieve a small increase in the breakdown voltage of gallium oxide diodes. However, the

Method used

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  • Gallium oxide-based Schottky diode and preparation method thereof
  • Gallium oxide-based Schottky diode and preparation method thereof
  • Gallium oxide-based Schottky diode and preparation method thereof

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preparation example Construction

[0046] The embodiment of the present invention also provides a preparation method of a gallium oxide-based Schottky diode, which includes:

[0047] Preparation of epitaxial gallium oxide on gallium oxide substrate;

[0048] performing the first nitrogen ion implantation on the first region of the epitaxial gallium oxide, and then performing the first heat treatment to form a first insulating region at the first depth of the epitaxial gallium oxide;

[0049] performing a second nitrogen ion implantation on the second region of the epitaxial gallium oxide, and then performing a second heat treatment to form a plurality of second insulating regions on the surface of the epitaxial gallium oxide;

[0050]preparing a Schottky metal layer straddling two adjacent second insulating regions;

[0051] An ohmic metal layer on the lower surface of the gallium oxide substrate is prepared.

[0052] In the above process, epitaxial gallium oxide can be prepared on a gallium oxide substrate t...

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Abstract

The invention provides a gallium oxide-based Schottky diode and a preparation method thereof. The diode comprises a gallium oxide substrate, an epitaxial gallium oxide arranged on the gallium oxide substrate, a first insulating region located at a first depth of the epitaxial gallium oxide, a plurality of second insulating regions located on an upper surface of the epitaxial gallium oxide, a Schottky metal layer arranged on two adjacent second insulating regions in a spanning manner, and an ohmic metal layer located on a lower surface of the gallium oxide substrate. The diode is advantaged inthat through the first insulating region and the second insulating region which are formed at different depths of the epitaxial gallium nitride, a punch-through structure is formed on the basis of ensuring forward conduction, and a breakdown voltage is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and further relates to a gallium oxide-based Schottky diode and a preparation method of the gallium oxide-based Schottky diode. Background technique [0002] Due to its excellent material properties, including ultra-wide bandgap (4.8eV) and ultra-high critical breakdown field strength (8MV / cm), gallium oxide materials are especially suitable for high-voltage applications. On the other hand, the gallium oxide substrate material can be prepared by the guided mode method, and its production cost is relatively low, which has potential application advantages. Schottky diodes occupy a certain market share in the high-voltage switching field because of their high switching speed and low conduction loss. [0003] At present, a variety of gallium oxide-based Schottky diodes are available. The preparation process of these diodes includes depositing the ohmic electrode on the back and the Schottky e...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329
CPCH01L29/66143H01L29/872
Inventor 龙世兵孙海定吴枫
Owner UNIV OF SCI & TECH OF CHINA
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