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A double conduction type silicon carbide photoconductive switch and its preparation method

A photoconductive switch, silicon carbide technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of unutilized primary energy storage, low energy utilization rate, etc., and achieve increased trigger frequency and full release. Effect

Active Publication Date: 2021-03-12
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The photoconductive switches provided by the above invention patents are all prepared based on the fact that a laser pulse generates a current and voltage waveform. For a pulsed laser of a specific frequency, only a trigger electrical signal of the same frequency can be generated; for the primary energy storage, it is a continuous storage In the case of energy, the photoconductive switch can only discharge once after being triggered by the laser. For the linear switch mode, there is a situation that the primary energy storage is not used, and the energy utilization rate is low.

Method used

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  • A double conduction type silicon carbide photoconductive switch and its preparation method
  • A double conduction type silicon carbide photoconductive switch and its preparation method
  • A double conduction type silicon carbide photoconductive switch and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A dual conduction silicon carbide photoconductive switch, such as figure 1 with figure 2 As shown, a silicon carbide substrate 1 is included, electrodes 3 are arranged on both sides of the upper surface of the silicon carbide substrate 1, and a highly doped n-type gallium nitride layer 2 is arranged between the electrode 3 and the silicon carbide substrate 1, In addition, one of a p-type gallium nitride layer, an n-type silicon carbide layer, and a p-type silicon carbide layer can also be arranged between the electrode 3 and the silicon carbide substrate 1; moreover, between the electrode 3 and the silicon carbide substrate 1 Ohmic contacts can also be formed by ion implantation or high temperature annealing.

[0040] The current channel area between the electrodes 3 is provided with patterned and etched graphics; when the laser triggers the double-conduction silicon carbide photoconductive switch, the photogenerated carriers make the photoconductive switch work in a ...

Embodiment 2

[0048] According to the dual conduction silicon carbide photoconductive switch provided in Embodiment 1, the difference lies in:

[0049] In this example, if image 3 As shown, the patterned etching pattern provided on the current channel area is a periodically arranged square array pattern 5 .

Embodiment 3

[0051] The preparation method of the dual conduction type silicon carbide photoconductive switch provided in embodiment 1 includes:

[0052] (1) Using metal-organic chemical vapor deposition (MOCVD) technology to epitaxially grow a 200nm-thick n-type gallium nitride layer of highly doped silicon on the silicon surface of the semi-insulating silicon carbide substrate 1, with a doping concentration of 2×10 19 cm-3, and use the photolithography process to make the electrode pattern of the photoconductive switch on the silicon carbide substrate 1; the distance between the electrodes 3 is 1-7mm, and the size of the electrodes 3 is (3-5)mm×(6 -10) mm;

[0053] (2) Evaporating a Ti / Pt / Au composite metal layer on the semi-insulating silicon carbide substrate 1 by using electron beam evaporation equipment, and peeling off with acetone to obtain a whole silicon carbide wafer with a photoconductive switch electrode structure;

[0054] (3) The samples were alloyed in an alloy furnace wit...

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Abstract

The invention relates to a double-conduction type silicon carbide photo-conductive switch and a preparation method thereof. The photo-conductive switch comprises a silicon carbide substrate; electrodes are respectively arranged on two sides of the upper surface of the silicon carbide substrate; the electrodes and the silicon carbide form ohmic contact through setting highly doped epitaxial layersor carrying out ion implantation or annealing; a graphic for graphical etching processing is arranged on a current channel area between the electrodes; and when the photo-conductive switch is triggered by laser, a photon-generated carrier enables the photo-conductive switch to generate first conduction, the graphic for graphical etching processing on the current channel area causes surface flashover to cause discharging so as to generate second conduction, so that the fact once laser causes twice conduction is realized. According to the double-conduction type silicon carbide photo-conductive switch provided by the invention, the primary energy is released more sufficiently through graphically processing the current channel area between the electrodes, twice conduction is triggered at onceand the trigger frequency is improved.

Description

technical field [0001] The invention relates to a double-conduction silicon carbide photoconductive switch and a preparation method thereof, belonging to the technical field of semiconductor device preparation. Background technique [0002] The photoconductive switch is a new type of ultrafast semiconductor device that realizes the on and off states of the switch by controlling the generation and recombination of carriers with light. key device. As a new type of switching device in the pulse power system, compared with the traditional pulse power device, the photoconductive switch has good repetition rate performance, short closing time (ps level), small time jitter (ps level), and low switching inductance (sub-nano Henry), high synchronization accuracy (ps level), strong electromagnetic compatibility and other advantages, it has a broad application prospect in solid-state compact pulse power sources. Photoconductive switches are the same as traditional pulsed power switch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0232H01L31/0236H01L31/18
CPCH01L31/02322H01L31/02366H01L31/101H01L31/18Y02P70/50
Inventor 肖龙飞陈秀芳徐现刚
Owner SHANDONG UNIV