Photoelectric conversion device

Abstract

A photoelectric conversion device comprises: a plurality of first conduction type crystalline semiconductor grains (2), on each surface layer of which a second conduction type semiconductor portion (4) is formed and which are bonded, at a certain interval, to the surface of a conductive substrate (1); an insulating layer (3) formed between the crystalline semiconductor gains (2) on the conductive substrate (1); a transparent conductive layer (5) formed above the insulating layer (3) and the crystalline semiconductor grains (2); and a collector electrode (7) formed on the surface of the transparent conductive layer (5). The collector electrode (7) consists of a conductive plate having a plurality of through holes (40) that allow external light to illuminate each of the crystalline semiconductor grains (2). Since a transparent light collecting layer (8) is provided on the transparent conductive layer (5) and the collector electrode (7). It is possible to eliminate shadow loss while suppressing resistance loss with a simple process and provide a photoelectric conversion device having a high efficiency.

Description

technical field [0001] The present invention relates to a photoelectric conversion device used for solar power generation, and in particular to an electrode structure and a light-collecting structure in a photoelectric conversion device using crystalline semiconductor particles. Background technique [0002] In general photoelectric conversion devices of the crystalline plate series, an n-type semiconductor region is formed on one main surface side of a p-type silicon substrate to form a pn junction, and a transparent electrode is formed on the entire surface by a light-transmitting conductive layer. A device in which electrodes are respectively formed on the transparent electrode on the one main surface side of the substrate and on the back surface side of the substrate. As the electrodes on the transparent electrode, interdigital electrodes for current collection formed in parallel rows so as not to hinder the incidence of light on the pn junction are generally provided, a...

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Problems solved by technology

[0017] However, in the mesh method shown in Patent Document 1, it is costly to manufacture the mesh support, and there is also a problem with the uniformity of the mesh size. In addition, there is a problem of filling Si particles in predetermined holes in the aluminum method. The problem that the process is not suitable for complex, high-speed and high-volume manufacturing

In addition, in order to solve the above-mentioned problems, in Patent Document 3, it is proposed to dispose the light-receiving side electrode on the non-photoactive part of the crystalline semiconductor particle, but the width and thickness of the light-receiving side electrode are still limited, and the reduction of resistance loss limit of existence

In addition, if Figure 12 As shown in (a) and (b), in the connection between the photoelectric conversion devices, the bus electrode 9 is connected to the end of the conductive stretching material (Stringus material) 10 of a conductive linear member or a strip-shaped member, so The bonding area being joined is narrow and the bonding strength is insufficient

[0018] In addition, in the photoelectric conversion device shown in Patent Document 4, a small-area photoelectric conversion element is produced by cutting a plate-shaped body of a crystalline semiconductor made of crystalline silicon or the like, and it is necessary to connect the photoelectric conversion elements with a tab or the like, and there is a problem. The problem that the number of manufacturing steps increases and the manufacturing is complicated

[0019] In addition, the photoelectric conversion device shown in Patent Document 5 uses a spherical lens formed parallel to the curved surface of the crystalline semiconductor particle. When the spherical lens is used to reduce the dependence of the photoelectric conversion efficiency on the incident angle of light, only the crystal The distance between semiconductor particles is expanded to about 1 / 10 of the diameter of crystalline semiconductor particles

As a result, the amount of semiconductor used in the photoelectric conversion device is not reduced, which is not conducive to weight reduction and cost reduction

[0020] In addition, the photoelectric conversion device shown in Patent Document 6 is formed by deforming the substrate into the shape of a concave mirror, but it is difficult to maintain the shape of the substrate and the boundary of the concave mirror is not formed at an acute angle in the manufacturing method, so it cannot be ignored in the boundary. The reflection of light, resulting in the loss of photoelectric conversion

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