Two-dimensional square ferromagnetic material, preparation method thereof, storage unit and method for regulating and controlling storage unit to identify storage data
A ferromagnetic material and storage unit technology, which is applied in the field of information storage and can solve the problems of reducing the physical volume of high-density storage devices and failing to meet actual needs.
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[0035] The present invention also provides a preparation method of the two-dimensional tetragonal ferromagnetic material, comprising the following steps:
[0036] Depositing a layer of Fe atoms on the substrate to obtain a substrate covered with Fe atoms;
[0037] Under the condition that the initial pressure is 8-12 atmospheres, the substrate coated with Fe atoms is reacted with chlorine gas at 950-1050° C., and then the substrate is removed to obtain the two-dimensional tetragonal ferromagnetic material.
[0038]The invention deposits the Fe atomic layer on the substrate to obtain the Fe atom-coated substrate. In the present invention, the substrate is preferably a quartz substrate; the deposition method is preferably a magnetron sputtering method; the present invention does not have any special restrictions on the process of the magnetron sputtering. The well-known process of depositing Fe can be carried out by magnetron sputtering to ensure the obtained Fe atomic layer wi...
Embodiment 1~10
[0071] Preparation method of two-dimensional tetragonal ferromagnetic material layer:
[0072] Using the magnetron sputtering method, a single layer of Fe atomic layer is deposited on the quartz substrate to obtain a substrate covered with Fe atoms;
[0073] Place the Fe-atom-coated substrate in an anti-corrosion hyperbaric chamber, introduce chlorine gas until the pressure of the hyperbaric chamber rises to 10 atmospheres, heat up to 1000°C, react for 2 hours, cool down naturally, and mechanically peel off the substrate. A single layer of two-dimensional tetragonal ferromagnetic material is peeled off from the quartz substrate to obtain a two-dimensional tetragonal ferromagnetic material layer;
[0074] Preparation method of storage unit:
[0075]After the substrate 1 is cleaned and dried, a first insulating layer 2 is deposited on the substrate 1, and then the prepared two-dimensional tetragonal ferromagnetic material layer is transferred to the upper surface of the first i...
Embodiment 11
[0083] At a temperature of 55K, the nanowire layer 7 of the storage unit described in Examples 1 to 10 is fed with a pulse current to generate a magnetic field, and the electron spin of the two-dimensional square ferromagnetic material in the two-dimensional square ferromagnetic material layer is changed. direction, so that the bandgap width of the two-dimensional tetragonal ferromagnetic material changes in the range of 0eV to 1.2eV;
[0084] A voltage of 5 mV is applied between the first electrode layer 4 and the first electrode layer 5, the current value is measured, and the stored data of the memory cell is identified through the current value.
[0085] Figure 5 It is a test result diagram of the storage performance retention of the storage unit described in Embodiment 1 of the present invention at a temperature of 55K, which is represented by Figure 5 It can be seen that the current between the first electrode and the second electrode is small when the spin of the two-...
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