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A kind of preparation method and application of gold nanoparticle modified boron-doped diamond electrode

A boron-doped diamond and gold nanoparticle technology, which is applied to the preparation and application fields of gold nanoparticle modified boron-doped diamond electrodes, can solve the problem of poor bonding force, hindering the electrochemical performance of boron-doped diamond materials, and the electrochemical performance of boron-doped diamond electrode materials. Problems such as low detection sensitivity, to achieve the effect of short moving path, simple preparation method and high sensitivity

Active Publication Date: 2021-04-09
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] One of the problems to be solved by the present invention is that the boron-doped diamond prepared by the existing method has poor bonding force when other substances are modified on its surface, and another problem to be solved is that the electrochemical detection sensitivity of the boron-doped diamond electrode material is low, The existing modification methods will hinder the electrochemical performance of the boron-doped diamond material itself, and provide a preparation method and application of gold nanoparticles modified boron-doped diamond electrode

Method used

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  • A kind of preparation method and application of gold nanoparticle modified boron-doped diamond electrode

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specific Embodiment approach 1

[0026] Specific embodiment one: present embodiment a kind of preparation method of gold nanoparticle modification boron-doped diamond electrode, it is carried out according to the following steps:

[0027] One, the preparation of boron source:

[0028] Grind the boron oxide powder to a fine powder with a particle size of 5 μm to 100 μm, then add the fine powder with a particle size of 5 μm to 100 μm into the graphite powder, stir evenly, and then press it into a square sheet to obtain boron oxide with graphite as the carrier boron source;

[0029] The mass ratio of described boron oxide powder and graphite powder is 1:(1~200);

[0030] 2. Preparation of boron-doped diamond film:

[0031] Place the substrate and the boron oxide boron source with graphite as the carrier side by side on the sample stage of the microwave plasma chemical vapor deposition device, feed hydrogen and carbon source gas, and then flow the hydrogen at a flow rate of 20sccm to 400sccm and the flow rate o...

specific Embodiment approach 2

[0039] Embodiment 2: This embodiment differs from Embodiment 1 in that: the side length of the square sheet described in step 1 is 30 mm to 50 mm, and the thickness is 1 mm to 2.5 mm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0040] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the purity of graphite powder and boron oxide powder described in step 1 is both 99.99%. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a preparation method and application of a gold nanoparticle-modified boron-doped diamond electrode, which relates to a preparation method and application of a gold-modified boron-doped diamond electrode. One of the problems to be solved by the present invention is that the boron-doped diamond prepared by the existing method has poor bonding force when other substances are modified on its surface, and another problem to be solved is that the electrochemical detection sensitivity of the boron-doped diamond electrode material is low, The existing modification methods will hinder the electrochemical performance of the boron-doped diamond material itself. Preparation method: 1. preparation of boron source; 2. preparation of boron-doped diamond film; 3. coating and annealing. The invention is used for the preparation and application of the boron-doped diamond electrode modified by gold nanoparticles.

Description

technical field [0001] The invention relates to a preparation method and application of a gold-modified boron-doped diamond electrode. Background technique [0002] Boron-doped diamond materials have good wear resistance, chemical stability, biocompatibility and some excellent electrochemical properties, such as low background current, wide potential window and surface acid and alkali resistance. Therefore, boron-doped diamond materials have great application potential in the field of electrochemical analysis. [0003] The existing boron-doped diamond preparation methods are mainly high temperature and high pressure method and chemical vapor deposition method. Most boron-doped diamonds prepared by high temperature and high pressure methods are bulk materials with different sizes, and secondary processing, such as cutting and grinding, is required according to actual needs. Moreover, high-temperature and high-pressure boron-doped diamonds often contain impurities such as ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/517C23C14/35C23C14/18C23C14/58G01N21/65G01N27/30G01N27/327
CPCC23C14/185C23C14/35C23C14/5806C23C16/274C23C16/276C23C16/517G01N21/65G01N27/308G01N27/327
Inventor 朱嘉琦姚凯丽代兵谭小俊杨磊刘本建张森刘康韩杰才
Owner HARBIN INST OF TECH
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