mram device and its manufacturing method

Abstract

The present application provides an MRAM device and a manufacturing method thereof. The manufacturing method includes: step S1, arranging a first interconnection part and a second interconnection part in an interconnection medium layer; step S2, arranging a first etch barrier layer and a first dielectric layer in sequence on the surface of an interconnection medium layer layer; step S3, forming a first metal hole in the first etching barrier layer and the first dielectric layer above the first interconnection; step S4, sequentially forming a first metal hole on the surface of the first dielectric layer above the first interconnection Setting the bottom electrode, the MTJ unit, the top electrode, and the second etch barrier layer; step S5, sequentially setting the third dielectric layer, the third etch barrier layer and the fourth dielectric layer on the surface of the second dielectric layer away from the first dielectric layer Dielectric layer; Step S6, opening the second through hole and the third through hole; Step S7, filling the second through hole and the third through hole with metal. The manufacturing method reduces the process difficulty and improves the cost rate of the device.

Description

technical field [0001] The present application relates to the field of memory, and in particular, relates to an MRAM device and a manufacturing method thereof. Background technique [0002] In the prior art, an MRAM device includes a logic area and a storage area, the logic area is mainly a switching device, the storage area is mainly an MTJ device, and the MTJ device includes a bottom electrode, an MTJ unit and a top electrode. [0003] At present, the height difference between the interconnection structure above the top electrode and the interconnection structure above the logic area is relatively large. At the same time, another via hole needs to be opened in the dielectric layer of the storage area. The height difference between the two via holes is large, and the requirements for the etching selection ratio are very high. The process is difficult and the yield rate of the finished product is low. . Contents of the invention [0004] The main purpose of the present a...

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Problems solved by technology

[0004] The main purpose of the present application is to provide an MRAM device and its manufacturing method to solve the problem of the large height difference between the interconnection structure above the top electrode of the storage area of ​​the MRAM device and the interconnection structure in the logic area in the prior art, resulting in The production process is more difficult

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