Grounding structure and chemical vapor deposition equipment with grounding structure

Abstract

The invention discloses a grounding structure and chemical vapor deposition equipment with the grounding structure. The grounding structure comprises a grounding guide rod arranged in the direction perpendicular to a base and a middle connecting piece fixed to the base and electrically connected with the base. The end, away from the base, of the middle connecting piece is in sliding electric connection with the grounding guide rod. According to the grounding structure, base grounding connection is achieved through the manner of relative sliding electric connection of the grounding guide rod and the middle connecting piece. Compared with an existing grounding metal sheet repeated bending manner, in the whole film forming process, grounding connection during the up-down movement of the baseis more stable; and meanwhile, according to the chemical vapor deposition equipment adopting the grounding structure, grounding stability during continuous film forming is improved, and the phenomenonof film abnormality due to grounding structure grounding instability or fracture is avoided.

Description

technical field [0001] The present application relates to the technical field related to chemical vapor deposition equipment, in particular to a grounding structure and chemical vapor deposition equipment having the grounding structure. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is to use microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma is highly chemically active and easy to react. The desired film is deposited on the substrate. In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma is used to promote the reaction, so this chemical vapor deposition is called plasma enhanced chemical vapor deposition (PECVD). [0003] During the PECVD deposition process, it is necessary to ground the base carrying the substrate in the reaction chamber. In the prior art, the grounding metal sheet with a thickness of 0.25 mm to ...

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Problems solved by technology

[0004] The embodiment of the present application provides a grounding structure and chemical vapor deposition equipment to solve the problem that the existing grounding metal sheet is broken due to the up and down movement of the base during the continuous film forming process, thereby affecting the film forming process and making the film quality after film formation abnormal.

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