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A grounding structure and chemical vapor deposition equipment with the grounding structure

A chemical vapor deposition, grounding structure technology, applied in gaseous chemical plating, connecting contact materials, metal material coating processes, etc. Avoid abnormal membrane quality, improve grounding stability, and smooth grounding connection

Active Publication Date: 2021-08-03
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides a grounding structure and chemical vapor deposition equipment to solve the problem that the existing grounding metal sheet is broken due to the up and down movement of the base during the continuous film forming process, thereby affecting the film forming process and making the film quality after film formation abnormal.

Method used

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  • A grounding structure and chemical vapor deposition equipment with the grounding structure
  • A grounding structure and chemical vapor deposition equipment with the grounding structure
  • A grounding structure and chemical vapor deposition equipment with the grounding structure

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Embodiment Construction

[0021] The specific structural and functional details disclosed herein are merely representative and are used to describe the exemplary embodiments of the present application. However, the present application can be implemented in many replacements, and should not be construed as limited to the embodiments set forth herein.

[0022] In the description of this application, it is to be understood that the term "center", "horizontal", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or position of "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the drawings, which is merely described herein, rather than indicating or implies the device referred to. Or components must have specific orientation, constructive and operated in a specific orientation, so it is not understood to limit the limitations of the present application. Moreover, the term "first", "second" is only used to describe the purpose, and...

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Abstract

The present application discloses a grounding structure and chemical vapor deposition equipment with the grounding structure. The grounding structure includes grounding guide rods arranged along a direction perpendicular to the base, and fixed on the base and connected to the base. The intermediate connecting piece electrically connected to the base; the end of the intermediate connecting piece far away from the base is electrically connected to the grounding guide bar by sliding. Compared with the existing method of repeatedly bending the grounded metal sheet, the grounding connection is more stable when the base moves up and down during the entire film forming process. At the same time, the chemical structure of the grounding structure Vapor deposition equipment improves the grounding stability during continuous film formation and avoids abnormal film quality caused by unstable grounding or breakage of the grounding structure.

Description

Technical field [0001] The present application relates to chemical vapor deposition equipment related art fields, and more particularly to a grounding structure and a chemical vapor deposition apparatus having the grounding structure. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition, PECVD) is an ionizing gas containing a film containing a film with a microwave or radio frequency or the like, and plasma chemical activity is very strong, and it is easy to react. The desired film is deposited on the substrate. In order to carry out the chemical reaction at a lower temperature, the activity of the plasma promotes the reaction, and thus such chemical vapor deposition is referred to as plasma enhancement chemical vapor deposition (PECVD). [0003] During the PECVD deposition, the base of the carrier substrate in the reaction chamber needs to be grounded. In the prior art, most of the ground metal sheet connecting the base and the ground terminal of the reaction ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50H01R4/66
CPCC23C16/50H01R4/66
Inventor 高德龙
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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