Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma generating system and temperature adjustment method

A technology of temperature regulation and plasma, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc.

Active Publication Date: 2020-01-07
TAIWAN SEMICON MFG CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The gas conditioning system is configured to supply hot conditioning gas to the gas distribution element

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma generating system and temperature adjustment method
  • Plasma generating system and temperature adjustment method
  • Plasma generating system and temperature adjustment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0088] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present case. Of course, these examples are only examples and are not intended to be limiting. For example, the form of a first feature on a second feature in the following description may include an embodiment in which the first feature is formed in direct contact with the second feature, and may also include an embodiment in which the first feature and the second feature may be placed between the first feature and the second feature. An embodiment in which an additional feature is formed between such that the first feature and the second feature may not be in direct contact. As used herein, the formation of a first feature on a second feature means that the first feature is formed in direct contact with the second feature. Additionally, the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a plasma generating system. The plasma generating system is provided with a dielectric window, an induction coil arranged on the dielectric window, a gas distribution elementarranged on the dielectric window, and a gas adjusting system coupled to the gas distribution element. The gas distribution element is configured to discharge a thermal conditioning gas over the dielectric window and adjust a temperature across the dielectric window. The gas conditioning system is configured to supply a thermally conditioned gas to the gas distribution element.

Description

technical field [0001] The disclosure relates to a plasma generation system and a temperature adjustment method. Background technique [0002] With the advancement of semiconductor technology, there has been a need for higher storage capacity, faster processing systems, higher performance and lower cost. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices. This scaling has increased the complexity of the semiconductor manufacturing process, as well as the requirements for temperature regulation in the semiconductor manufacturing system. Contents of the invention [0003] The disclosure provides a plasma generation system comprising a dielectric window, an induction coil disposed on the dielectric window, a gas distribution element disposed on the dielectric window, and a gas distribution element coupled to the gas distribution Components of the gas regulation system. The gas distribution element is configured to discha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67011H01J37/3211H01J37/32449H01J37/32522H01J37/32119H01J2237/002H01J2237/24585H01J2237/332H01J2237/334H01L21/67069
Inventor 刘立熙
Owner TAIWAN SEMICON MFG CO LTD