Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reference voltage generating device

A technology for generating devices and reference voltages, which is applied in the field of circuits, can solve problems such as complex structures and high device manufacturing costs, and achieve the effects of simplifying structures, solving high manufacturing costs, and eliminating bias current branches

Active Publication Date: 2020-01-10
GUANGDONG UNIV OF TECH
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present application provides a reference voltage generating device, which is used to solve the technical problem of high manufacturing cost caused by the complex structure of the existing reference voltage generating device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reference voltage generating device
  • Reference voltage generating device
  • Reference voltage generating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The embodiment of the present application provides a reference voltage generating device, which is used to solve the technical problem of high manufacturing cost of the existing reference voltage generating device caused by complex structure.

[0027] see figure 1 , the existing reference voltage generating device is composed of a start-up circuit, a bias current generator and a core output voltage structure, which uses four types of MOS transistors: transistors with thicker gate lines have threshold voltages of 0.86V and - 0.77V 3.3VMOS transistors nMOS and pMOS, the rest are 1.8VMOS transistors nMOS and pMOS with threshold voltages of 0.47V and -0.45V respectively.

[0028] Its working principle is: the start-up circuit is responsible for the work of the circuit device at zero voltage, and plays the role of protecting the circuit. The bias current generation part uses the connection relationship of four cascaded transistors to generate a bias current that is little af...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses a reference voltage generating device. A source of a first MOS tube and a source of a second MOS tube are electrically connected with a voltage source respectively; agate of the first MOS tube is electrically connected with a gate of the second MOS tube; the gate of the second MOS tube is connected with a drain of the second MOS tube to form a current mirror structure; a drain of the first MOS tube is electrically connected with a gate of a third MOS tube, and a drain and a gate of a fourth MOS tube, respectively; a source of the third MOS tube is connected with the drain of the fourth MOS tube, and is electrically connected with a gate of a sixth MOS tube, and a threshold voltage of the fourth MOS tube is greater than a threshold voltage of the third MOStube; the drain of the second MOS tube is electrically connected with a gate and a drain of a fifth MOS tube, and the gate of the sixth MOS tube; and a drain of the sixth MOS tube is connected with asource of the fifth MOS tube, and is electrically connected with an output port; and a threshold voltage of the sixth MOS tube is greater than a threshold voltage of the fifth MOS tube. According tothe circuit structure provided by the present application, the technical problem of a high manufacturing cost caused by the complicated structure of the existing reference voltage generating device issolved.

Description

technical field [0001] The present application relates to the field of circuits, in particular to a reference voltage generating device. Background technique [0002] The reference voltage source is a circuit that can provide a stable output voltage when the process, power supply voltage, and temperature change. It is an important part of analog integrated circuits, such as analog-to-digital converters, digital-to-analog All voltage regulators require a precise and stable voltage reference. With the increasing scale of integrated circuits, especially the development of system integration technology (SOC), it has also become an indispensable basic circuit module in large-scale, VLSI and almost all digital and analog systems. In precision measurement instruments and widely used digital communication systems, reference voltage sources can also be used as a reference for system measurement and calibration. [0003] Such as figure 1 As shown, the existing reference voltage gen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F3/26
CPCG05F3/26
Inventor 沈夏童余凯李思臻章国豪
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products