The invention provides a sapphire substrate manufacturing method, and the method comprises the steps: obtaining a wafer which is cleaned after wire cutting, carrying out the cleaning before annealing of the wafer which is cleaned after wire cutting, and carrying out the annealing treatment of the wafer; according to the wafer specification data, carrying out wire cutting and then dividing on the annealed wafers, screening the wafers subjected to division, and obtaining the screened wafers of the first specification; and chamfering the first specification wafer to obtain the sapphire substrate. According to the sapphire substrate manufacturing method, the wafer subjected to linear cutting is detected according to the wafer specification data to obtain the wafer of the first specification, the wafer of the first specification is chamfered, the sapphire substrate is obtained through the chamfered wafer, double-sided grinding is not needed, the manufacturing technological process is simplified, and the technical problem that in the prior art, after multi-line cutting, all products need to be subjected to double-face grinding, then subsequent production procedures can be conducted, and the single-piece production cost is high is solved.