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Thin film transistor and preparation method thereof

A technology of thin film transistors and oxides, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problem of high production cost of metal oxides

Active Publication Date: 2019-04-16
深圳庸行科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention provides a thin film transistor and a preparation method to solve the technical problem of high manufacturing cost of the existing metal oxide TFT

Method used

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  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof

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Embodiment 1

[0035] An embodiment of the present invention provides a thin film transistor. figure 1 A schematic structural diagram of a thin film transistor provided by an embodiment of the present invention. see figure 1 , the thin film transistor includes: a substrate 10; a gate layer 20 formed on the substrate 10; a first insulating layer 30 formed on the gate layer 20; an active layer 40 formed on the first insulating layer 30; The patterned source electrode 50 and the drain electrode 51 on the active layer 40 are electrically connected to the active layer 40 respectively; the organic passivation layer 60 formed on the patterned source electrode 50 and the drain electrode 51, the organic passivation layer 60 is in direct contact with the active layer 40; the active layer 40 includes a metal oxide. Metal oxides including indium oxide In 2 o 3 Composite oxides composed of oxides MO of elements of the fifth subgroup (In 2 o 3 )a(MO) b , wherein, a+b=1, 0.10≤b≤0.50; the organic pas...

Embodiment 2

[0053] On the basis of the above-mentioned embodiments, the embodiment of the present invention provides a method for manufacturing a thin film transistor, based on figure 1 thin film transistors shown, see image 3 , the preparation method comprises the steps of:

[0054] Step 110, providing a substrate;

[0055] Step 120, sequentially forming a gate layer, a first insulating layer and an active layer on the substrate;

[0056] Step 130, forming a source layer and a drain layer on the active layer, and forming a patterned source and drain layer by etching the source layer and the drain layer. The etching process includes wet etching and dry etching;

[0057] Step 140 , forming an organic passivation layer on the patterned source and drain electrodes, the organic passivation layer is in direct contact with the active layer; the active layer includes metal oxide. The active layer includes a metal oxide including Indium oxide In 2 o 3 Composite oxides composed of oxides MO...

Embodiment 3

[0097] On the basis of the above technical solution, an embodiment of the present invention provides a display panel, including the thin film transistor mentioned in the above embodiment. Thin film transistors are used to drive display units in display panels.

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Abstract

The invention discloses a thin film transistor and a preparation method thereof. The thin film transistor comprises a substrate, a gate layer, a first insulating layer, an active layer, a patterned source electrode, a drain electrode, and an organic passivation layer; the gate layer, the first insulating layer and the active layer are formed on the substrate, the patterned source electrode and drain electrode formed on the active layer are respectively electrically connected with the active layer; the organic passivation layer formed on the patterned source electrode and drain electrode is indirect contact with the active layer; the active layer comprises a metal oxide, the metal oxide comprises an oxide In2O3 of indium and a composite oxide formed by oxide MO of a fifth sub-group element, and the organic passivation layer is a polymer organic material. According to the technical scheme, the organic passivation layer is in direct contact with the active layer composed of the indium oxide In2O3 of indium and the composite oxide formed by the oxide MO of the fifth sub-group element; on one hand, the organic passivation layer and the active layer are in direct contact such that a donor doping effect is not caused to the active layer, and the device works normally and stably; on the other hand, the preparation process is simple, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, in particular to a thin film transistor and a preparation method. Background technique [0002] The core technology of the new flat panel display (Flat Panel Display, FPD) industry is the thin film transistor (ThinFilm Transistor, TFT) backplane technology. Metal oxide TFT (Metal Oxide-TFT, MO-TFT) not only has high mobility, but also has a relatively simple manufacturing process, is compatible with the current a-Si process, has low manufacturing cost, and has excellent large-area uniformity sex. Therefore, MO-TFT technology has attracted the attention of the industry since its birth. [0003] However, due to the relatively "fragile" metal oxide semiconductor film, it is extremely susceptible to the doping effects of non-metallic and metal ions such as acid and alkali etching solutions, plasma, water, oxygen and carbon adsorption, and hydrogen ions. Generally, solve...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66969H01L29/7869
Inventor 徐苗徐华李美灵王磊李民庞佳威陈子楷彭俊彪邹建华陶洪
Owner 深圳庸行科技有限公司
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