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Oxide semiconductor material, thin film transistor, manufacturing method, and display panel

A technology of oxide semiconductor and thin film transistor, applied in semiconductor/solid state device manufacturing, transistors, semiconductor devices, etc., can solve problems such as constraints and difficult to achieve high-performance device preparation

Active Publication Date: 2021-01-15
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides an oxide semiconductor material, a thin film transistor, a manufacturing method and a display panel, wherein the oxide semiconductor includes indium oxide In 2 o 3 The composite metal oxide formed with the oxide MO of the fifth subgroup element to solve the obvious constraints of the existing oxide semiconductor materials in the manufacturing process of the back-channel etched thin film transistor and the difficulty in realizing the preparation of high-performance devices technical issues

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  • Oxide semiconductor material, thin film transistor, manufacturing method, and display panel
  • Oxide semiconductor material, thin film transistor, manufacturing method, and display panel
  • Oxide semiconductor material, thin film transistor, manufacturing method, and display panel

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Embodiment 1

[0039] An embodiment of the present invention provides an oxide semiconductor material, including: indium oxide In 2 o 3 Composite oxides composed of oxides MO of elements of the fifth subgroup (In 2 o 3 ) a (MO) b , where a+b=1, 0.10≤b≤0.50.

[0040] In this embodiment, indium oxide In 2 o 3 It is an n-type semiconductor with a stable cubic ferromanganese structure. Due to its intrinsic carrier concentration can be as high as 10 20 cm -3 , the optical bandgap is between 2.67eV and 3.75eV, it has high visible light transparency, and is mainly used in the field of transparent conductive films. When oxide semiconductor materials are used in thin film transistor devices, see figure 1 , an oxide semiconductor material is often used as the active layer 40 of a thin film transistor device. In addition, the thin film transistor device also includes a substrate 10; a gate layer 20 formed on the substrate 10; a first insulating layer 30 formed on the gate layer 20; an active...

Embodiment 2

[0052] On the basis of the above-mentioned embodiments, the embodiment of the present invention provides a thin film transistor to figure 1 For example, the thin film transistor includes: a substrate 10; a gate layer 20 formed on the substrate 10; a first insulating layer 30 formed on the gate layer 20; an active layer 40 formed on the first insulating layer 30; The patterned source electrode 50 and drain electrode 51 formed on the active layer 40 are respectively electrically connected to the active layer 40; the active layer 40 includes the oxide semiconductor material in the above-mentioned embodiments.

[0053] The active layer of the thin-film transistor in the embodiment of the present invention includes the oxide semiconductor material in the above-mentioned embodiment, by adding indium oxide (In 2 o 3 ) mixed with the fifth subgroup oxide MO to form a microcrystalline (In 2 o 3 ) a (MO) b The oxide semiconductor material can effectively resist etching by wet etchi...

Embodiment 3

[0058] On the basis of the above-mentioned embodiments, the embodiment of the present invention provides a method for manufacturing a thin film transistor, based on figure 1 thin film transistors shown, see image 3 , the preparation method comprises the steps of:

[0059] Step 110, providing a substrate.

[0060] Step 120 , sequentially forming a gate layer, a first insulating layer and an active layer on the substrate.

[0061] Step 130, forming a source layer and a drain layer on the active layer, and forming patterned source and drain layers by performing an etching process on the source layer and the drain layer. The etching process includes wet etching and dry etching. etching; the active layer includes the oxide semiconductor material in the above embodiments.

[0062] Optionally, on the basis of the above technical solution, the oxide semiconductor material is prepared by any one of physical vapor deposition, chemical vapor deposition, atomic layer deposition, laser...

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Abstract

The invention discloses an oxide semiconductor material, a thin film transistor, a preparation method and a display panel. The oxide semiconductor material comprises: indium oxide In 2 o 3 Composite oxides composed of oxides MO of elements of the fifth subgroup (In 2 o 3 ) a (MO) b , where a+b=1, 0.10≤b≤0.50. In the technical solution of the present invention, the oxide semiconductor includes indium oxide In 2 o 3 The composite metal oxide formed with the oxide MO of the fifth subgroup element to solve the obvious constraints of the existing oxide semiconductor materials in the manufacturing process of the back-channel etched thin film transistor and the difficulty in realizing the preparation of high-performance devices technical problems.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, in particular to an oxide semiconductor material, a thin film transistor, a preparation method and a display panel. Background technique [0002] In recent years, the new flat panel display (FPD) industry has developed rapidly, and the high demand for large-size, high-resolution flat panel displays has been increasing. Thin Film Transistor (TFT) backplane technology, which is the core technology of the FPD industry, is also undergoing profound changes. At present, the material of the semiconductor channel layer of the thin film transistor used in the flat panel display is mainly silicon material, including amorphous silicon, polycrystalline silicon, microcrystalline silicon and the like. However, amorphous silicon thin film transistors have the disadvantages of light sensitivity, low mobility and poor stability, and cannot meet the requirements of driving OLED display...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L21/336H01L29/786H01L27/32
CPCH01L29/24H01L29/66742H01L29/7869H10K59/12H01L29/66969
Inventor 徐华徐苗陈子楷李民庞佳威彭俊彪王磊邹建华陶洪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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