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Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

A technology of organic film and organic group, which is applied in the field of organic film forming materials, can solve the problems of unsatisfactory landfill characteristics and planarization characteristics, and achieve the effects of excellent adhesion, good yield, and good yield

Active Publication Date: 2020-11-27
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these organic film-forming materials are not satisfactory in terms of embedding characteristics and planarization characteristics of the pattern formed on the substrate.
[0008] In addition, as for the examples having the imide structure shown in the present invention, polyimide structures described in Patent Document 12 and Patent Document 13 are known. Resin with an amine structure, Patent Document 14 using a compound with a bismaleimide structure, etc., but for these materials, it is not an example of a terminal substituent group with a triple bond on the nitrogen atom, and is aimed at Formation of cured film in gas, film thickness variation due to thermal decomposition under high temperature conditions, filling characteristics, planarization characteristics, etc. are unknown

Method used

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  • Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process
  • Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process
  • Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

Examples

Experimental program
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Embodiment

[0277] Hereinafter, the present invention will be described in more detail by showing synthesis examples, comparative synthesis examples, examples, and comparative examples, but the present invention is not limited thereto. In addition, regarding the molecular weight and the degree of dispersion, the weight average molecular weight (Mw) and the number average molecular weight (Mn) in terms of polystyrene by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent were obtained. , and obtain the degree of dispersion (Mw / Mn).

[0278] [Synthesis example of polymer for organic film-forming material]

[0279] The following tetracarboxylic anhydrides (B1) to (B6) and diamine compounds (C1) to (C6) were used as terminal blocking agents in the synthesis of the polymers (A1) to (A16) for organic film-forming materials. The aniline derivatives and phthalic anhydride derivatives (D1) to (D5). A 60:40 mixture of isomers was used for (C3).

[0280] Tetracarboxylic anhyd...

Synthetic example 1

[0289] [Synthesis example 1] Synthesis of polymer (A1)

[0290] 120 g of NMP (N-methyl-2-pyrrolidone) was added to 15.55 g of tetracarboxylic anhydride (B1) and 14.62 g of diamine compound (C1), and the reaction was carried out at an inner temperature of 40° C. for 3 hours under a nitrogen atmosphere. 5.16 g of terminal blocking agents (D1) were added to the obtained polyamic acid intermediate solution, and the reaction was further performed at an internal temperature of 40°C for 3 hours to obtain a polyimide precursor solution. To the obtained reaction liquid, 4.00 g of pyridine was added, and 12.25 g of acetic anhydride was gradually added dropwise, and then the reaction was carried out at an internal temperature of 60° C. for 4 hours to carry out imidization. After the reaction was completed, it was cooled to room temperature, 400 g of methyl isobutyl ketone was added, the organic layer was washed twice with 100 g of a 3% nitric acid aqueous solution, and then washed 6 time...

Synthetic example 2～16

[0295] [Synthesis Examples 2 to 16] Synthesis of Polymers (A2) to (A16)

[0296] The polymers (A2) to (A16) shown in Table 1 were obtained under the same reaction conditions as in Synthesis Example 1, except that the diamine compound, tetracarboxylic anhydride, and terminal blocking agent shown in Table 1 were used. as a product. The weight average molecular weight (Mw) and the degree of dispersion (Mw / Mn) of these polymers were obtained, as shown in Table 2.

[0297] [Table 1]

[0298]

[0299] The following compounds (E1) to (E5) and the aforementioned tetracarboxylic anhydride ( B4), (B5), diamine compounds (C2), (C3), and terminal blocking agents (D3), (D5).

[0300] [Chemical 42]

[0301]

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Abstract

The invention relates to a material for forming an organic film, a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The object isto provide a composition for forming an organic film using a polymer including an imide group capable of forming an organic underlayer film that cures under film-forming conditions not only in the airbut also in an inert gas, generates no byproduct, is excellent in not only heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, but also good adhesivenessto a substrate, a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material for forming the organic film includes (A) a polymer having a repeating unit represented by the general formula (1A) whose terminal group is a group represented by either of the general formulae (1B) or (1C), and (B) an organic solvent: wherein W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein R1 represents any of the groups represented by the formula (1D), and two or more of R1s may be used in combination.

Description

technical field [0001] The present invention relates to a material for forming an organic film used in a manufacturing step of a semiconductor device, a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film, and a method for forming a pattern by a multilayer resist method. Background technique [0002] Conventionally, high integration and high speed of semiconductor devices have been achieved by miniaturization of the pattern size by reducing the wavelength of the light source in a lithography technique (optical lithography) using light exposure, which is a general technique. In order to form such a fine circuit pattern on a semiconductor device substrate (substrate to be processed), a method of processing the substrate to be processed by dry etching using a patterned photoresist film as an etching mask is generally used . However, in reality, there is no dry etching method capable of obtaining a complete etching selecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/12C08J5/18H01L21/308
CPCC08G73/126C08G73/127C08J5/18H01L21/3081H01L21/3086C08J2379/08C08J2479/08G03F7/094G03F7/11G03F7/09C08L79/08G03F7/037C08G73/1075C08G73/1032G03F7/004G03F7/162G03F7/168H01L21/0332H01L21/0337H01L21/31144H01L21/32139H01L21/02126H01L21/02164H01L21/02186H01L21/02271G03F7/2002G03F7/0002G03F7/30G03F7/091H01L21/0271H01L21/033
Inventor 郡大佑泽村昂志新井田惠介橘诚一郎渡边武荻原勤
Owner SHIN ETSU CHEM IND CO LTD
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