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Organic film forming material, organic film forming method, pattern forming method, and compound

An organic film, organic solvent technology, applied in organic chemistry, photosensitive materials for opto-mechanical equipment, polyether coatings, etc., can solve problems such as difficult substrate adhesion

Pending Publication Date: 2021-06-29
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this resist underlayer film material has a problem that the adhesion to the substrate is difficult to meet the requirements of the most advanced devices.

Method used

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  • Organic film forming material, organic film forming method, pattern forming method, and compound
  • Organic film forming material, organic film forming method, pattern forming method, and compound
  • Organic film forming material, organic film forming method, pattern forming method, and compound

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0363] Hereinafter, the present invention will be more specifically described with reference to synthesis examples, comparative synthesis examples, examples, and comparative examples, but the present invention is not limited thereto. In addition, the molecular weight and the degree of dispersion were obtained by calculating the weight average molecular weight (Mw) and the number average molecular weight (Mn) in terms of polystyrene by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent, and obtaining the degree of dispersion (Mw / Mn).

Synthetic example

[0364] Synthesis Example Synthesis of Compounds for Organic Film Forming Materials

[0365] Synthesis of polymers (A1) to (A29) for organic film forming materials, using the following epoxy compounds (compound group B: (B1) to (B14)), carboxylic acid compounds (compound group C: (C1 )~(C9)).

[0366] Compound group B:

[0367] [chem 63]

[0368]

[0369] Purchased reagents other than those listed above were used.

[0370] (B1) EXA-850CRP (DIC (stock) system) epoxy equivalent: 172

[0371] (B2) HP-4700 (manufactured by DIC (stock)) Epoxy equivalent: 165

[0372] (B3) HP-4770 (DIC (stock)) epoxy equivalent: 205

[0373] (B5) 1032H60 (manufactured by Mitsubishi Chemical Co., Ltd.) epoxy equivalent: 167

[0374] (B10) DAG-G (manufactured by Shikoku Chemical Industry Co., Ltd.) Epoxy equivalent: 168

[0375] (B11) TG-G (manufactured by Shikoku Chemical Industry Co., Ltd.) Epoxy equivalent: 92

[0376] (B13) EPOLIGHT MF (manufactured by Kyoei Chemical Co., Ltd.) epoxy equ...

Synthetic example 1

[0381] [Synthesis Example 1] Synthesis of Compound (A1)

[0382] [chem 65]

[0383]

[0384] After 15.0g of epoxy compound (B1), 25.0g of carboxylic acid compound (C1), and 200g of 2-methoxy-1-propanol were prepared into a uniform solution under nitrogen atmosphere at an internal temperature of 100°C, benzyl tri 1.00 g of ethylammonium chloride was stirred at an internal temperature of 120° C. for 12 hours. After cooling to room temperature, add 300ml of methyl isobutyl ketone and dilute with 2% NaHCO 3 Wash with 100 g of aqueous solution, 100 g of 3% nitric acid aqueous solution twice, and wash with 100 g of ultrapure water 5 times. The organic layer was dried under reduced pressure to obtain compound (A1). The weight-average molecular weight (Mw) and degree of dispersion (Mw / Mn) were determined by GPC, and the results were Mw=920 and Mw / Mn=1.04.

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PUM

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Abstract

The invention relates to an organic film forming material, an organic film forming method, a pattern forming method, and a compound. Provided is an organic film material for forming an organic film having both high-level landfill characteristics, high-level planarization characteristics, and excellent adhesion between substrates. Provided is an organic film-forming material containing a compound represented by general formula (1) and an organic solvent. In general formula (1), X is an n1-valent organic group having 2-50 carbon atoms, n1 represents an integer of 2-10, and R1 is at least one of formulae (2)-(4). In general formula (3), l1 represents 0 or 1; in general formula (4), l2 represents 0 or 1.

Description

technical field [0001] The present invention relates to an organic film forming material, a method for forming an organic film, a method for forming a pattern, and a compound. Background technique [0002] Along with the high integration and high speed of LSI, the miniaturization of pattern size is progressing rapidly. Photolithography technology, along with this miniaturization, achieves the formation of fine patterns by shortening the wavelength of the light source and appropriate selection of the corresponding resist composition. The central one is a positive photoresist composition used in a single layer. This single-layer positive photoresist composition has a framework with etching resistance to dry etching by chlorine-based or fluorine-based gas plasma in the resist resin, and has a resist that dissolves the exposed part. The etchant mechanism, whereby the exposed portion is dissolved to form a pattern, and the remaining resist pattern is used as an etching mask to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/027G03F7/11C07D307/88C07D493/10C07D311/82C07D233/74C07D239/62C07D251/30C07D487/04C07C69/736
CPCG03F7/004G03F7/027G03F7/11C07D307/88C07D493/10C07D311/82C07D233/74C07D239/62C07D251/30C07D487/04C07C69/736C09D171/00G03F7/094C08F299/02C09D171/12C08G65/00C08G65/4043H01L21/02118H01L21/0271G03F7/091G03F7/168H01L21/0276C08L33/066C08L33/16G03F7/0755G03F7/162H01L21/0274
Inventor 郡大佑中原贵佳美谷岛祐介野田和美
Owner SHIN ETSU CHEM IND CO LTD
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