Composition for forming organic film, method for forming pattern, and polymer

Abstract

The invention relates to a composition for forming an organic film, a pattern forming method, and a polymer. Provided are: a composition for forming an organic film, which contains a thermosetting polymer having a high carbon content and exhibits high etching resistance and excellent twisting resistance; a pattern forming method using the composition for forming an organic film; and a polymer suitable for the method. The composition for forming an organic film includes a polymer having a partial structure represented by the following general formula (1A) or (1B) and an organic solvent. In general formula (1A), Ar1 and Ar2 represent an optionally substituted benzene ring or naphthalene ring, X represents a single bond or a methylene group, and L represents one of the following groups; wherein the broken line in the formula represents a valence bond, and R represents a hydrogen atom or a monovalent organic group with 1-20 carbon atoms. In general formula (1B), W1 represents a hydroxyl group, an alkoxy group having 1-10 carbon atoms, or an optionally substituted organic group having at least one aromatic ring, and Ar1, Ar2, X, and L are as described above.

Description

technical field [0001] The present invention relates to a composition for forming an organic film, a pattern forming method using the composition, and a polymer contained in the composition. Background technique [0002] In recent years, along with the high integration and high speed of semiconductor elements, the miniaturization of pattern rules is required. How can photolithography using light exposure, which is currently used as a general technology, perform finer and higher precision for the light source used? Pattern processing has undergone various technical developments. [0003] As a light source for lithography used for resist pattern formation, photoexposure using g-rays (436 nm) or i-rays (365 nm) of a mercury lamp as a light source is widely used in areas with low density. On the other hand, photolithography using short-wavelength KrF excimer laser (248nm) and ArF excimer laser (193nm) has been put into practical use in areas where the density is high and miniat...

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Problems solved by technology

The resin used in such materials is composed of naphthalene, fluorene, adamantane, etc. with high carbon density as the main skeleton, but the deterioration of etching resistance due to oxygen atoms in phenolic hydroxyl groups cannot be avoided

[0010] In addition, as for the resin for the underlayer film material that does not contain heteroatoms such as oxygen in order not to impair the etching resistance, there is a resin with a fluorene structure described in Patent Document 6, but in order to form a cured film, it is obtained by using A composition containing a crosslinking agent such as a methylol compound is used to form a cured film. Therefore, even if the carbon content of the resin is increased, there is still a problem that the etching resistance will be impaired due to the inclusion of a crosslinking agent with a low carbon content.

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