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Composition for forming organic film, method for forming pattern, and polymer

A technology of organic film and composition, which is applied in the direction of photomechanical equipment, photoplate making process of pattern surface, photosensitive material used in optomechanical equipment, etc., can solve the problems of damage and etching resistance, and achieve high dry etching resistance, The effect of high twist resistance

Pending Publication Date: 2020-11-17
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resin used in such materials is composed of naphthalene, fluorene, adamantane, etc. with high carbon density as the main skeleton, but the deterioration of etching resistance due to oxygen atoms in phenolic hydroxyl groups cannot be avoided
[0010] In addition, as for the resin for the underlayer film material that does not contain heteroatoms such as oxygen in order not to impair the etching resistance, there is a resin with a fluorene structure described in Patent Document 6, but in order to form a cured film, it is obtained by using A composition containing a crosslinking agent such as a methylol compound is used to form a cured film. Therefore, even if the carbon content of the resin is increased, there is still a problem that the etching resistance will be impaired due to the inclusion of a crosslinking agent with a low carbon content.

Method used

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  • Composition for forming organic film, method for forming pattern, and polymer
  • Composition for forming organic film, method for forming pattern, and polymer
  • Composition for forming organic film, method for forming pattern, and polymer

Examples

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Embodiment

[0255] The present invention will be specifically described below with examples and comparative examples, but the present invention is not limited thereto.

[0256] Synthesis of the polymers (A1) to (A17) contained in the composition for forming an organic film used the following fluorenols (B1) to (B10) and aromatic-containing compounds (C1) to (C3).

[0257] Fluorenols:

[0258] [chem 36]

[0259]

[0260] Aromatic compounds:

[0261] [chem 37]

[0262]

[0263] When many fluorenols are used to synthesize the polymer, the feeding ratio of the fluorenols is represented by the following formula using m and l.

[0264] [chem 38]

[0265]

Synthetic example 1

[0267] Under a nitrogen atmosphere, 200 g of 1,2-dichloroethane was added to 30.0 g of fluorenol (B1), and a uniform solution was prepared at an internal temperature of 50°C. 14.0 g of methanesulfonic acid was slowly added, and the reaction was carried out at an internal temperature of 70° C. for 8 hours. After cooling to room temperature, 500 g of toluene was added, washed with 100 g of pure water six times, and the organic layer was dried under reduced pressure. 100 g of THF (tetrahydrofuran) was added to the residue to form a uniform solution, and then 300 g of methanol was precipitated. The precipitated crystals were separated by filtration, washed twice with 200 g of methanol, and recovered. The recovered crystals were vacuum-dried at 70° C. to obtain a polymer (A1) represented by the following formula. The weight-average molecular weight (Mw) and degree of dispersion (Mw / Mn) of the polymer (A1) obtained in terms of polystyrene were obtained by GPC measurement using THF...

Synthetic example 2

[0271] Under a nitrogen atmosphere, 200 g of 1,2-dichloroethane was added to 30.0 g of fluorenol (B2) to prepare a uniform solution at an internal temperature of 50°C. 13.8 g of methanesulfonic acid was slowly added, and the reaction was carried out at an internal temperature of 70° C. for 8 hours. After cooling to room temperature, 500 g of toluene was added, washed with 100 g of pure water six times, and the organic layer was dried under reduced pressure. 100 g of THF (tetrahydrofuran) was added to the residue to prepare a homogeneous solution, and then 300 g of methanol was precipitated. The precipitated crystals were separated by filtration, washed twice with 200 g of methanol, and recovered. The recovered crystals were vacuum-dried at 70° C. to obtain a polymer (A2) represented by the following formula. The weight-average molecular weight (Mw) and degree of dispersion (Mw / Mn) of the polymer (A2) obtained in terms of polystyrene were determined by GPC measurement using T...

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Abstract

The invention relates to a composition for forming an organic film, a pattern forming method, and a polymer. Provided are: a composition for forming an organic film, which contains a thermosetting polymer having a high carbon content and exhibits high etching resistance and excellent twisting resistance; a pattern forming method using the composition for forming an organic film; and a polymer suitable for the method. The composition for forming an organic film includes a polymer having a partial structure represented by the following general formula (1A) or (1B) and an organic solvent. In general formula (1A), Ar1 and Ar2 represent an optionally substituted benzene ring or naphthalene ring, X represents a single bond or a methylene group, and L represents one of the following groups; wherein the broken line in the formula represents a valence bond, and R represents a hydrogen atom or a monovalent organic group with 1-20 carbon atoms. In general formula (1B), W1 represents a hydroxyl group, an alkoxy group having 1-10 carbon atoms, or an optionally substituted organic group having at least one aromatic ring, and Ar1, Ar2, X, and L are as described above.

Description

technical field [0001] The present invention relates to a composition for forming an organic film, a pattern forming method using the composition, and a polymer contained in the composition. Background technique [0002] In recent years, along with the high integration and high speed of semiconductor elements, the miniaturization of pattern rules is required. How can photolithography using light exposure, which is currently used as a general technology, perform finer and higher precision for the light source used? Pattern processing has undergone various technical developments. [0003] As a light source for lithography used for resist pattern formation, photoexposure using g-rays (436 nm) or i-rays (365 nm) of a mercury lamp as a light source is widely used in areas with low density. On the other hand, photolithography using short-wavelength KrF excimer laser (248nm) and ArF excimer laser (193nm) has been put into practical use in areas where the density is high and miniat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/11G03F7/09C08G61/02
CPCG03F7/004G03F7/11G03F7/09C08G61/02C08G2261/3142C08G2261/1414G03F7/094C08L65/00G03F7/091G03F7/075G03F7/20G03F7/32C08G2261/11C08G2261/1422C08G2261/148C08G2261/149C08G2261/228C08G2261/314C09D165/00G03F7/0045G03F7/168G03F7/2006G03F7/2041G03F7/322G03F7/38H01L21/0276
Inventor 郡大佑中原贵佳泽村昂志佐藤裕典山本靖之
Owner SHIN ETSU CHEM IND CO LTD
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