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Polishing pad and method for producing same

A manufacturing method and technology of polishing pads, which are applied in the field of polishing pads, can solve problems such as poor flatness of objects to be polished, and achieve the effects of excellent flattening characteristics, fast polishing speed, and suppressing scratches

Inactive Publication Date: 2017-02-22
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, if the polishing layer is made hydrophilic, although the polishing speed increases, there is a problem that the flatness of the object to be polished is deteriorated.

Method used

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  • Polishing pad and method for producing same
  • Polishing pad and method for producing same
  • Polishing pad and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] 10.2 parts by weight of 3-isocyanatopropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBE-9007), toluene diisocyanate (2,4-body / 2,6-body=80 / 20 mixture, TDI-80) 37.8 parts by weight, polycaprolactone triol (manufactured by Daicel Chemical Industries, Ltd., PCL305, hydroxyl value: 305 mgKOH / g, number of functional groups: 3) 22.6 parts by weight, number average molecular weight 650 26.5 parts by weight of polytetramethylene ether glycol (PTMG650) and 2.9 parts by weight of diethylene glycol (DEG). At this time, the NCO index is 1.9, reacted at 75 ° C for 3 hours, and prepared isocyanate-terminated prepolymer (NCO wt% is 9.12 wt%, hereinafter referred to as Si-prepolymer).

[0114] 75 parts by weight of a polyether prepolymer (manufactured by Uniroyal Co., Ltd., Ajiplen L-325), 25 parts by weight of the prepared Si-prepolymer, and a polysiloxane-based surface were added to the reaction vessel. 3 parts by weight of an active agent (manufactured by Golds...

Embodiment 2～8、 comparative example 1～3

[0117] A polishing pad was produced in the same manner as in Example 1 except that the formulation described in Table 1 was used. The hydrophilic prepolymers in Table 1 were prepared by the following method.

[0118] 40 parts by weight of polyethylene glycol (PEG, manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd., with a number average molecular weight of 1000), and 12.8 parts by weight of polyethylene glycol (PEG, manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd., with a number average molecular weight of 600) were placed in the reaction vessel. parts, DEG6 parts by weight, dehydration under reduced pressure for 1 to 2 hours while stirring. Then, nitrogen was introduced into the separable flask, and TDI-80 (41.2 parts by weight) was added after nitrogen substitution. While keeping the temperature in the reaction system at about 70°C, the mixture was stirred until the reaction was completed. The end of the reaction was when NCO% reached a substantially constant val...

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Abstract

The purpose of the present invention is to provide: a polishing pad having a high polishing rate and excellent planarizing properties; and a method for producing the polishing pad. A polishing pad which has a polishing layer comprising a polyurethane resin foam, said polishing pad being characterized in that a polyurethane resin, which is a material used for forming the polyurethane resin foam, has an alkoxysilyl group represented by general formula (1) in a side chain thereof. (In the formula, X represents OR1 or OH; and R1's independently represent an alkyl group having 1 to 4 carbon atoms.)

Description

technical field [0001] The present invention relates to the smoothing of optical materials such as lenses and mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and general metal polishing processes that require high surface flatness, stably and with high polishing efficiency. Processed abrasive pads. The polishing pad of the present invention is particularly suitable for the process of planarizing silicon wafers and devices on which oxide layers, metal layers, etc. are formed, before stacking and forming these oxide layers and metal layers. Background technique [0002] As a representative material requiring a high degree of surface flatness, there is a disk of single crystal silicon called a silicon wafer for manufacturing a semiconductor integrated circuit (IC, LSI). For silicon wafers, in order to form reliable semiconductor junctions of various thin films used in circuit formation in the manufacturing process of IC, LSI, etc., in each proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24C08G18/10H01L21/304C08G101/00
CPCC08G18/4833C08G18/4854C08G18/6607C08G18/664C08G18/6674C08G18/7621C08G18/4018C08G18/4277C08G18/4808C08G2101/00C08J2207/00C08J9/0061C08J9/30C08J2201/022C08J2205/052C08J2300/108C08J2375/04C08J2483/12B24B37/24C08G18/10C08G18/718C08G18/12C08G18/3814H01L21/304C08L75/04C08G18/70C08G18/3206H01L21/30625
Inventor 清水绅司
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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