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Material for forming organic film, substrate, method for forming organic film, patterning process, and compound for forming organic film

An organic film and compound technology, applied in the field of organic film-forming compounds, can solve the problems of insufficient filling properties and flattening properties, and achieve the effects of excellent adhesion and high heat resistance

Pending Publication Date: 2020-10-27
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these organic film-forming materials are insufficient in terms of embedding characteristics and planarization characteristics of the pattern formed on the substrate.
[0008] Also, as examples of compounds having an imide structure shown in the present invention, resins having a polyimide structure described in Patent Document 11 and compounds having a bismaleimide structure are known. However, for these materials, it is not an example of a monomolecular compound having a terminal substituent having a triple bond, and it is aimed at the formation of a hardened film in an inert gas, and a film caused by thermal decomposition under high temperature conditions. Thickness variation, filling characteristics, planarization characteristics, etc. are unknown

Method used

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  • Material for forming organic film, substrate, method for forming organic film, patterning process, and compound for forming organic film
  • Material for forming organic film, substrate, method for forming organic film, patterning process, and compound for forming organic film
  • Material for forming organic film, substrate, method for forming organic film, patterning process, and compound for forming organic film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0337] Hereinafter, the present invention will be described more specifically by illustrating synthesis examples, comparative synthesis examples, examples, and comparative examples, but the present invention is not limited thereto. In addition, in terms of molecular weight and degree of dispersion, polystyrene-equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) were obtained by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent. , and obtain the degree of dispersion (Mw / Mn).

Synthetic example

[0338] Synthesis Example Synthesis of Compounds for Organic Membrane Materials

[0339] Compounds (A1) to (A19) for organic membrane materials were synthesized using aniline derivatives B: (B1) to (B5) and tetracarboxylic dianhydrides C: (C1) to (C11) shown below.

[0340] Aniline derivatives:

[0341] [chemical 50]

[0342]

[0343] Tetracarboxylic dianhydrides:

[0344] [Chemical 51]

[0345]

[0346] The following chemical formulas are considered to have three isomer structures such as the following (1) to (3) when producing an amic acid compound using, for example, tetracarboxylic dianhydride (C1) and aniline derivative (B1). Therefore, with respect to the amic acid compound and the amic acid ester compound derived from amic acid having the same isomer structure, one of the isomer structures is designated as a representative structure.

[0347] [Chemical 52]

[0348]

Synthetic example 1

[0349] [Synthesis Example 1] Synthesis of Compound (A1)

[0350] Add 100g of N-methyl-2-pyrrolidone to 15.51g of (C1), make a homogeneous solution at an internal temperature of 40°C under a nitrogen atmosphere, and slowly add the solution that has been dissolved in N-methyl-2-pyrrolidone in advance dropwise. 11.72 g of 30 g of (B1) was reacted at internal temperature 40 degreeC for 3 hours, and an amic-acid solution was obtained. After adding 3.96 g of pyridine to the obtained amic-acid solution, and adding 12.25 g of acetic anhydride slowly, reaction was implemented at internal temperature 60 degreeC for 4 hours, and imidization was performed. After completion of the reaction, cool to room temperature and add 300 g of methyl isobutyl ketone, wash the organic layer with 100 g of 3% aqueous nitric acid solution, wash with 100 g of pure water 6 times, and dry the organic layer under reduced pressure. After adding 100 g of THF (tetrahydrofuran) to the residue to obtain a homogen...

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Abstract

The invention relates to a material for forming an organic film, a substrate, a method for forming an organic film, a patterning process, and a compound for forming an organic film. An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heatresistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic under-layer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent.

Description

technical field [0001] The present invention relates to a material for forming an organic film used in a manufacturing step of a semiconductor device, a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film, a method for forming a pattern by a multilayer resist method, and ideally used Compounds for organic film formation on this material. Background technique [0002] Conventionally, higher integration and higher speed of semiconductor devices have been achieved by miniaturization of pattern size due to shorter wavelength of light sources in photolithography (optical lithography) using light exposure, which is a general-purpose technology. In order to form such a fine circuit pattern on a semiconductor device substrate (substrate to be processed), a method of processing the substrate to be processed by dry etching using a patterned resist film as an etching mask is generally used. However, in reality, there is no dry et...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D209/48C07D403/14C07D207/404C07C233/75C07C39/17C08F22/40C08L101/02G03F7/11G03F7/16G03F7/26G03F7/36H01L21/027
CPCC07D209/48C07D403/14C07D207/404C07C39/17C07C233/75G03F7/36C08F22/40C08L101/02G03F7/11G03F7/168G03F7/26H01L21/0274G03F7/094C08G73/14C07C235/56C07C2603/18C08F38/00C08F220/283C08F220/24C09D135/00C08F220/20C08F220/1812C08G73/1017C08G73/1032H01L21/0332H01L21/0337H01L21/31144H01L21/32139G03F7/30C08G73/10G03F7/0045G03F7/162
Inventor 郡大佑新井田惠介泽村昂志渡边武橘诚一郎荻原勤
Owner SHIN ETSU CHEM CO LTD
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