Material for forming organic film, patterning process, and polymer

Abstract

The invention relates to a material for forming an organic film, a patterning process, and a polymer. The present invention addresses the problem of providing an organic film material which has excellent film-forming properties and can exhibit high etching resistance, excellent distortion resistance, and landfill characteristics, the patterning process using the organic film material, and the polymer suitable for the organic film material. The material for forming the organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, wherein AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; Wi represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings.

Description

technical field [0001] The present invention relates to a coating-type organic film suitable for microfabrication in the manufacturing steps of semiconductor elements, etc., and an organic film using the organic film suitable for far-ultraviolet rays, KrF excimer laser (248nm), ArF excimer laser (193nm), f 2 Laser (157nm), Kr 2 Laser (146nm), Ar 2 Patterning methods such as laser (126nm), extreme ultraviolet (EUV, 13.5nm), electron beam (EB), X-ray exposure, etc. Background technique [0002] In recent years, along with the high integration and high speed of semiconductor devices, the miniaturization of pattern rules is required. Among them, in the aspect of photolithography using light exposure, which is currently used as a general technology, there have been studies on how to implement finer And high-precision pattern processing, various technical developments for the light source used. [0003] As a light source for lithography used for resist pattern formation, photo...

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Problems solved by technology

The resin used in such materials is composed of naphthalene, fluorene, and adamantane with high carbon density as the main skeleton, but the etching resistance and twist resistance are insufficient, and further etching improvement is required.

[0010] In addition, as the resin for the underlayer film material that does not contain heteroatoms such as oxygen in order not to impair the etching resistance, resins having a fluorene structure described in Patent Document 7 can be exemplified, but for forming a cured film, a resin containing a hydroxyl group is used. Composition of cross-linking agents such as methyl compounds, so even if the carbon content of the resin is increased, there is still the problem of impairing the etching resistance due to the inclusion of cross-linking agents with low carbon content

[0011] Further, as a cross-linking agent with high carbon density, a compound having a fluorene structure described in Patent Document 8 has been proposed, but the cross-linking agent itself has high crystallinity and low solubility in organic solvents, so general-purpose organic solvents cannot be used. , and it is a rigid structure, so it is difficult to meet the required properties required for the underlying film material such as film formation, embedding / planarization characteristics, etc.

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