Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Material for forming organic film, method for forming organic film, method for forming pattern, and compound for forming organic film

An organic film and compound technology, applied in the field of organic film-forming compounds, can solve the problems of pattern filling characteristics, insufficient planarization characteristics, heat resistance, insufficient adhesion of flat surface substrates, etc., and achieve heat resistance excellent effect

Pending Publication Date: 2022-04-22
SHIN ETSU CHEM IND CO LTD
View PDF20 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials for organic film formation are not sufficient in the embedding characteristics and planarization characteristics of the pattern formed on the substrate.
[0008] In addition, as compounds having an imide structure, polyimides described in Patent Document 11, imide compounds described in Patent Document 12, etc. can be exemplified as compounds having excellent heat resistance, but the heat resistance is flat. Surface, adhesion to the substrate, etc. are not sufficient, and there is room for improvement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Material for forming organic film, method for forming organic film, method for forming pattern, and compound for forming organic film
  • Material for forming organic film, method for forming organic film, method for forming pattern, and compound for forming organic film
  • Material for forming organic film, method for forming organic film, method for forming pattern, and compound for forming organic film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0163] The above-mentioned amic acid or imide compound can be prepared by combining tetracarboxylic dianhydride and aniline derivatives according to the required performance. Specifically, those introduced with substituents contributing to improvement of solvent solubility, adhesiveness, embedding / planarization characteristics, substituents contributing to etching resistance, and film-forming properties in accordance with desired performance can be used. Organic film materials using these compounds can achieve both embedding / planarization characteristics and heat resistance in a high dimension.

[0164] As described above, the organic film-forming compound of the present invention can provide an organic film-forming composition having both heat resistance at 400° C. or higher and high embedding / planarization characteristics.

[0165] In addition, in the present invention, the flattening property refers to the performance of flattening the surface of the substrate. In the case...

Embodiment

[0237] Hereinafter, the present invention will be more specifically described with reference to synthesis examples, comparative synthesis examples, examples, and comparative examples, but the present invention is not limited thereto. In addition, in terms of molecular weight and degree of dispersion, polystyrene-equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) obtained by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent were obtained, And the degree of dispersion (Mw / Mn) was calculated.

[0238] [Synthesis Example Synthesis of Compounds for Organic Film Formation Materials]

[0239] Compounds (A1) to (A6) for organic film forming materials and compounds (R1) to (R3) for comparative examples were synthesized using the following tetracarboxylic dianhydrides: (B1) to (B3), Aniline derivatives: (C1) to (C6).

[0240] Tetracarboxylic dianhydrides:

[0241] [chem 25]

[0242]

[0243] (B3) used the reagent of Tokyo...

Synthetic example 1

[0272] [Synthesis Example 1] Synthesis of Compound (A1)

[0273] [chem 33]

[0274]

[0275] Add 30 g of N-methylpyrrolidone to 5.0 g of tetracarboxylic anhydride (B1), make a homogeneous solution under nitrogen atmosphere at an internal temperature of 40°C, add 2.46 g of amine compound (C1), and carry out the process at an internal temperature of 40°C for 3 hours reaction to obtain an amic acid solution. After adding 1.26 g of pyridine to the obtained amic-acid solution, and further dripping 3.25 g of acetic anhydride slowly, it was made to react at internal temperature 60 degreeC for 4 hours, and imidation was implemented. After adding 100 ml of methyl isobutyl ketone and 50 ml of pure water to the reaction liquid to make it homogenized, the separated aqueous layer was removed. Furthermore, the organic layer was washed 6 times with 50 ml of 3% nitric acid aqueous solution and 50 ml of pure water, and then the organic layer was dried under reduced pressure. After adding...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
wavelengthaaaaaaaaaa
boiling pointaaaaaaaaaa
Login to View More

Abstract

The invention relates to a material for forming an organic film, a method for forming an organic film, a method for forming a pattern, and a compound for forming an organic film. The present invention addresses the problem of providing a film which can be cured not only in the air but also in a film formation condition in a blunt gas, can be heat-resistant, has excellent filling and planarization characteristics of a pattern formed on a substrate, and can be used in the field of light-emitting devices, such as light-emitting devices, light-emitting devices, light-emitting devices, and the like. The present invention relates to an imide compound for an organic underlayer film, which has excellent film-forming properties and adhesiveness with respect to a substrate, and an organic film-forming material containing the same. A material for forming an organic film, which contains: (A) a compound for forming an organic film represented by general formula (1A); and (B) an organic solvent. [In the formula, W1 is a tetravalent organic group, n1 is an integer of 0 or 1, n2 is an integer of 1 to 3, and R1 is any one or more of the following general formula (1B). [Chemical 2]

Description

【Technical field】 [0001] The present invention relates to a material for forming an organic film used in a manufacturing step of a semiconductor device, a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film, a method for forming a pattern by a multilayer resist method, and ideally used Compounds for organic film formation on the above materials. 【Background technique】 [0002] Conventionally, higher integration and higher speed of semiconductor devices have been achieved by miniaturization of pattern size due to shorter wavelengths of light sources in lithography (optical lithography) using photoexposure, which is a general-purpose technology. In order to form such a fine circuit pattern on a semiconductor device substrate (substrate to be processed), a method of processing the substrate to be processed by dry etching using a patterned photoresist film as an etching mask is generally used. However, in reality, there is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D519/00G03F7/004G03F7/09
CPCC07D519/00G03F7/004G03F7/09G03F7/094G03F7/11C07D491/22C08G73/1046H01L21/02118H01L21/02282H01L21/02337H01L21/0332H01L21/0337H01L21/31144H01L21/32139G03F7/2004G03F7/32H01L21/0338H01L21/3088
Inventor 郡大佑泽村昂志佐藤裕典
Owner SHIN ETSU CHEM IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com