Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, pattern forming method, and polymer

Abstract

The invention relates to a composition for forming an organic film, a substrate for manufacturing a semiconductor device, a method for forming the organic film, a pattern forming method, and a polymer. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties offilling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; W1 represents a particular partial structure having a triple bond, and the polymer optionally contains two ormore kinds of W1: and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring.

Description

technical field [0001] The present invention relates to a composition for forming an organic film used in a process of manufacturing a semiconductor device, a substrate for manufacturing a semiconductor device using the composition, a method for forming an organic film, a method for forming a pattern by a multilayer resist method, and Polymers suitable for use in the aforementioned compositions. Background technique [0002] Conventionally, higher integration and higher speed of semiconductor devices have been achieved by miniaturization of pattern size due to shorter wavelength of light source in photolithography (optical lithography) using light exposure, which is a general-purpose technology. In order to form such a fine circuit pattern on a semiconductor device substrate (substrate to be processed), a method of processing the substrate to be processed by dry etching using a patterned photoresist film as an etching mask is generally used. . However, in reality, there is...

AI Technical Summary

Problems solved by technology

However, these materials are not examples of substituents having a triple bond on the nitrogen atom, but are directed to the formation of a cured film in an inert gas, film thickness fluctuations due to thermal decomposition under high temperature conditions, filling, etc. Buried characteristics, or planarization characteristics, etc. are not known

[0009] In addition, for nitrogen-containing compounds, there are also examples of interlayer film materials using monomolecular compounds such as Patent Documents 18 and 19. However, since monomolecular compounds are used, coating properties on substrates with complicated shapes, baking properties, etc. Problems caused by low-molecular sublimation products, etc., will leave problems in many characteristics of the heat resistance and etching resistance of the cured organic film.

Images