Composition for forming organic film, patterning process, and polymer

Abstract

The invention relates to a composition for forming an organic film, a pattern forming method, and a polymer. Provided is a composition for forming an organic film, which is capable of exhibiting highetching resistance, excellent twisting resistance and excellent film-forming properties without compromising the original carbon content of a resin, and which reduces a sublimate component that becomes a dissipative gas. Also provided are a pattern forming method using the composition and a polymer suitable for such a composition. This composition contains an organic solvent and a polymer containing a repeating unit represented by formula (1A) as a partial structure. In the general formula (1A), AR1 and AR2 are optionally substituted benzene rings or naphthalene rings, W1 is any one of the following general formulas (1B), and two or more types of W1 can be used in combination. W2 represents a divalent organic group having 1-80 carbon atoms; in general formula (1B), R1 represents a monovalent organic group having 1-10 carbon atoms and an unsaturated bond, and R2 represents a monovalent organic group having 6-20 carbon atoms and having one or more aromatic rings.

Description

technical field [0001] The present invention relates to a composition for forming an organic film, a pattern forming method using the composition, and a polymer contained in the composition. Background technique [0002] In recent years, along with the high integration and high speed of semiconductor elements, the miniaturization of pattern rules is required. How can photolithography using light exposure, which is currently used as a general technology, perform finer and higher precision for the light source used? Pattern processing has undergone various technical developments. [0003] As a light source for lithography used for resist pattern formation, photoexposure using g-rays (436 nm) or i-rays (365 nm) of a mercury lamp as a light source is widely used in areas with low density. On the other hand, photolithography using shorter wavelength KrF excimer laser (248nm) and ArF excimer laser (193nm) has also been put into practical use in the part where the density is high ...

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Problems solved by technology

The resin used in such materials is composed of naphthalene, fluorene, adamantane, etc. with high carbon density as the main skeleton, but the deterioration of etching resistance due to oxygen atoms in phenolic hydroxyl groups cannot be avoided

[0010] In addition, in order not to impair the etching resistance, the resin for the underlayer film material that does not contain heteroatoms such as oxygen is mentioned. The resin with the fluorene structure described in Patent Document 6 is cited, but in order to form a cured film, by using A cured film is formed using a cross-linking agent such as a methylol compound. Therefore, even if the carbon content of the resin is increased, there is still a problem that the etching resistance will be impaired due to the cross-linking agent with a low carbon content.

[0011] Furthermore, for an underlayer film material that does not contain an additive such as a crosslinking agent, and does not contain a heteroatom such as oxygen in order to improve etching resistance, the resist underlayer film material using a monomolecular compound described in Patent Document 7 can be cited. , but because of the use of monomolecular compounds, the coating properties on substrates with complex shapes, the problem of sublimation products caused by low molecules during baking, etc., the heat resistance and etching resistance of the organic film after curing, etc. Each feature has issues

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