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A modeling method and system for a nand flash storage unit

A technology of flash storage and storage unit, which is applied in the modeling field of NAND flash storage unit, can solve the problems affecting the project progress, consuming large computer resources and time, etc., and achieve the effect of improving the speed of design simulation

Active Publication Date: 2020-08-04
XTX TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims at the technical problem that there are too many transistors in the prior art, which consume a large amount of computer resources and time when designing simulations, and seriously affects the progress of the project, and provides a modeling method for NAND flash memory storage units. include:

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  • A modeling method and system for a nand flash storage unit
  • A modeling method and system for a nand flash storage unit
  • A modeling method and system for a nand flash storage unit

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Embodiment Construction

[0041] In order to solve the technical problem that there are too many transistors in the prior art in the prior art, which leads to the need to consume a lot of computer resources and time during design simulation, which seriously affects the progress of the project, the present invention provides a NAND The core idea of ​​modeling method and system of flash memory storage unit is: by using Verilog-A language to perform behavior-level modeling of storage unit, generate storage unit behavior-level model and replace transistor simulation model with storage unit behavior-level model to achieve significant Improve the technical effect of design simulation speed.

[0042] In order to make the objectives, technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0043] See figure 1 A preferred embodiment of the present invention provides a modeli...

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Abstract

The invention provides a modeling method and system for an NAND flash memory storage unit, and the method comprises the steps: carrying out the behavior-level modeling of the NAND flash memory storageunit, and generating a storage unit behavior-level model; and replacing the transistor simulation model with the storage unit behavior-level model. According to the method, the transistor simulationmodel is replaced by the storage unit behavior-level model, so that the design simulation time is remarkably shortened.

Description

Technical field [0001] This application relates to the field of integrated circuit technology, and in particular to a modeling method and system for NAND flash memory storage units. Background technique [0002] NAND flash memory is a type of flash memory, which is a non-volatile storage device. Its internal use non-linear macro cell mode, has the advantages of low power consumption, large capacity, fast reading and writing speed, etc., suitable for large amounts of data storage. Widely used in various electronic digital products, such as solid-state hard drives, U disks, digital cameras, MP3, etc. [0003] The operation of NAND flash memory includes three parts: read operation, program operation and erase operation. The programming operation and the erasing operation will update the threshold voltage (Vth) of the memory cell. Due to the huge number of storage cells, the 1Gbit SLC (Single-Level Cell) device has more than 100 million storage transistors. During the design simulat...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/30G06F30/367
Inventor 王述前
Owner XTX TECH INC