Capacitor structure with low capacitance
A capacitor structure and electrode technology, applied in capacitors, electric solid devices, circuits, etc., can solve the problems of low metal density capacitors, increase the area of integrated circuits, and cannot fully meet the needs of capacitor design.
Inactive Publication Date: 2020-02-11
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
Capacitors with lower metal density compared to surrounding components in integrated circuits, which can affect the operating performance of surrounding components
Lastly, connecting multiple existing capacitors in series introduces adjacency issues where additional metal lines are required in series and increase the integrated circuit area
[0005] As a result, existing capacitor structures cannot fully meet the design requirements of capacitors with low capacitance
Method used
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Embodiment Construction
[0063] The following disclosure provides various illustrative embodiments for implementing different configurations of the invention. The following examples of specific components and arrangements are used to simplify the content of the present invention but not to limit the present invention. For example, a description of forming a first component on a second component includes an embodiment in which the two are in direct contact, or an embodiment in which the two are interposed by other additional components rather than in direct contact. In addition, multiple examples of the present invention may repeatedly use the same reference numerals for brevity, but elements with the same reference numerals in various embodiments and / or configurations do not necessarily have the same corresponding relationship.
[0064] In addition, relative terms of space such as "lower", "above", "horizontal", "vertical", "on", "below", "above", "below", "top", and "Bottom" or its extensions such as ...
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Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal fingeris formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger andthe second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.
Description
technical field [0001] Embodiments of the present invention relate to capacitor structures, and more particularly to dummy metal fingers thereof. Background technique [0002] The development of the Internet of Things has led to many low-power applications of integrated circuits. Since the IC operating current in low power mode is low enough, low capacitance capacitors are required for high resolution applications using switched capacitors and step-and-step analog-to-digital converters. [0003] Low-capacitance capacitors in integrated circuits (such as sub-farad metal-oxide-metal capacitors) often face mismatch problems and are therefore difficult to design. There are three existing approaches to forming low-capacitance capacitors: reducing finger length, increasing space between fingers, and connecting multiple capacitors in series. [0004] However, reducing the finger length reduces the area of the capacitor fingers, resulting in poorer mismatch performance and an av...
Claims
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Login to View More IPC IPC(8): H01L23/64
CPCH01L28/60H01L28/86H01L23/5223
Inventor 陈泰邑杨忠杰彭永州
Owner TAIWAN SEMICON MFG CO LTD