Variable Bias Isolation Structure for Global Shutter Pixel Storage Nodes
An isolation structure and variable technology, applied in image communication, radiation control devices, TV system components, etc., can solve problems such as perceivable elongation distortion and image distortion
Active Publication Date: 2021-03-02
OMNIVISION TECH INC
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Problems solved by technology
For slowly moving objects, the time difference between each row can produce image distortion
For fast-moving subjects, rolling shutter can cause perceivable elongation distortion along the subject's axis of motion
Method used
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[0013] Disclosed are methods and apparatus directed to a pixel cell having a global shutter pixel storage structure including a bias switching isolation structure. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. One skilled in the relevant art will recognize, however, that the techniques described herein may be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.
[0014] Reference throughout this specification to "one example" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the example is included in at least one example of the present invention. Thus, appearances of the phrases "in one instance" or "in one embodiment" in various places t...
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The present application relates to variable bias isolation structures for global shutter pixel storage nodes. A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light, and a global shutter gate coupled to the photodiode to selectively deplete the image charge from the photodiode transistor. A storage transistor is disposed in the semiconductor material to store the image charges. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate sidewalls of the storage transistor from stray light and charge. The isolation structure is filled with tungsten and coupled to receive a variable bias signal to control the bias of the isolation structure. The variable bias signal is set to a first bias value during transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during transfer of the image charge from the storage transistor.
Description
technical field [0001] The present invention generally relates to semiconductor processing. More specifically, examples of the invention relate to semiconductor processing of image sensor pixel cells with global shutters. Background technique [0002] For high-speed image sensors, a global shutter can be used to capture fast-moving objects. A global shutter typically enables all pixel elements in an image sensor to simultaneously capture an image. For slower moving subjects, the more common rolling shutter is used. A rolling shutter typically captures images sequentially. For example, each row within a two-dimensional ("2D") array of pixel cells may be sequentially enabled such that each pixel cell within a single row simultaneously captures an image, but each row is enabled in a rolling order. Thus, each row of pixel cells captures an image during a different image acquisition window. For slowly moving objects, the time difference between each row can produce image dis...
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IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/14643H01L27/1463H01L21/765H01L27/14612H01L27/14623H01L29/16H01L21/02579H01L27/14689H01L21/02164H01L29/407H01L27/1443H01L21/3212H01L21/32051H01L27/14603H04N25/40H04N25/53H04N25/75H04N25/77
Inventor K·K·K·梁
Owner OMNIVISION TECH INC