Structure and method for isolation of bit line driver of three-dimensional NAND
A three-dimensional, deep trench isolation technology, applied in semiconductor devices, electrical solid state devices, semiconductor/solid state device manufacturing, etc., can solve complex isolation problems
Inactive Publication Date: 2020-03-06
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 9 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, as the size of 3D memory becomes smaller and smaller, the isolation between peripheral devices such as bit line drivers becomes complicated
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure may also be used in various other applications.
[0038] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, But each embodiment may not necessarily include that particular feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in conjunction wit...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Embodiments of a three-dimensional (3D) storage device and a manufacturing method are disclosed. In some embodiments, a 3D storage device includes a peripheral circuit formed on a first substrate. Theperipheral circuit includes a plurality of peripheral devices on a first side of the first substrate, a first interconnect layer, and a deep trench isolation on a second side of the first substrate,wherein the first side and the second side are opposite sides of the first substrate, and the deep trench isolation is configured to provide electrical isolation between at least two adjacent peripheral devices. The 3D storage device also includes a storage array formed on the second substrate. The storage array includes at least one storage cell and a second interconnect layer, where the second interconnect layer of the storage array is bonded to the first interconnect layer of the peripheral circuit, and the peripheral devices are electrically connected to the storage cell.
Description
technical field [0001] The present disclosure relates generally to the field of semiconductor technology, and in particular, to a method for forming a three-dimensional (3D) memory. Background technique [0002] As memory devices shrink to smaller die sizes to reduce manufacturing costs and increase storage density, scaling of planar memory cells is challenged due to process technology limitations and reliability issues. Three-dimensional (3D) memory architectures can address density and performance limitations in planar memory cells. [0003] In 3D memory, certain peripheral circuits such as bit line drivers for page buffers use high voltages to support storage functions such as erasing and programming memory cells. However, as the size of 3D memory becomes smaller and smaller, the isolation between peripheral devices (such as bit line drivers) becomes complicated. There is a need for isolation that can provide desired characteristics (eg, low leakage current and high bre...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/065H01L27/1157H01L27/11573H01L27/11578H10B41/27H10B41/40H10B41/50H10B43/20H10B43/27H10B43/35H10B43/40H10B43/50
CPCH01L25/0657H01L23/528H01L24/50H01L24/89H01L21/31053H01L21/76224H01L25/18H01L24/08H01L2224/80001H01L2224/8083H01L27/0688H01L2924/14511H01L2224/80075H01L2224/80097H01L24/80H01L2224/8009H01L2224/80896H01L2224/80895H01L2224/80013H01L23/5226H01L2224/08147H01L21/2007H01L2224/08145H01L2224/08146H10B43/50H10B43/40H10B43/20H10B43/35H10B43/27
Inventor 陈亮刘威甘程
Owner YANGTZE MEMORY TECH CO LTD