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Buffer area management method for NAND flash memory

A management method and buffer technology, applied in the cache field of computer storage devices, can solve problems such as asymmetric read and write costs of NAND flash memory, and achieve the effects of avoiding performance jitter problems, reducing search overhead and high hit rate.

Active Publication Date: 2020-03-17
XI AN JIAOTONG UNIV
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Problems solved by technology

Different from traditional disks, NAND flash memory is a storage medium that can be written once and erased in batches. NAND flash memory has three basic operations, namely read, write and erase operations, where read and write operations are performed in units of data pages Operation, the erase operation is performed in units of blocks, and the erase operation must be performed before writing, which leads to the asymmetry of the read and write cost of NAND flash memory

Method used

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  • Buffer area management method for NAND flash memory
  • Buffer area management method for NAND flash memory
  • Buffer area management method for NAND flash memory

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Embodiment Construction

[0042] see figure 1 , a buffer management method for NAND flash memory, the specific steps are as follows:

[0043] S1, the system counter is set, and the system counter value is used as the access time stamp value of the accessed data page in the buffer;

[0044] In terms of overall logic, the organizational structure of the buffer is regarded as an LRU linked list organized according to the logical number of the data page. The data page at the MRU end of the logical LRU linked list is the data page currently being accessed by the system, and its access time stamp value is the largest. The value is equal to the current system counter value, and from the MRU end to the LRU end, the data page access time stamp value decreases in turn.

[0045] On this basis, the concept of time window is proposed, and a time window size is selected at the MRU end of the logical LRU linked list to identify the number of data pages that have been accessed in the most recent period. The time wind...

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Abstract

The invention discloses an NAND flash memory-oriented buffer area management method, which comprises the following steps of: dividing a database buffer area into a cold clean linked list, a cold dirtylinked list and a mixed linked list, and numbering the cold clean linked list, the cold dirty linked list and the mixed linked list according to an overall access sequence; on the overall logic, thebuffer area is regarded as a single linked list organized according to an access sequence, a time window concept is provided, and data pages accessed in the latest period of time are covered; when buffer replacement occurs, checking whether a data page pointed by the tail of the linked list is in a time window or not according to the priority sequence of the cold clean linked list, the cold dirtylinked list and the mixed linked list; if so, searching a next linked list; and if not, directly replacing. According to the method, the flash memory write operation frequency is reduced while a relatively high hit rate is obtained, so that higher cache income is obtained, and the overall performance of the storage system is improved.

Description

technical field [0001] The invention belongs to the technical field of caching of computer storage devices, and in particular relates to a buffer management method for NAND flash memory. Background technique [0002] The buffer replacement algorithm is used to optimize IO operations and reduce the number of disk accesses, and is widely used in operating systems, data blocks, and network servers. The cache module of the computer storage device can optimize the I / O sequence and reduce the number of accesses to the storage device. A good buffer management method can obtain a higher hit rate and improve the performance of the storage system as a whole. [0003] Flash memory is a non-volatile storage device. Solid-state drives (SSDs) are widely used in mobile devices and personal computers due to their small size, light weight, impact resistance, high speed, and high reliability. Different from traditional disks, NAND flash memory is a storage medium that can be written once and...

Claims

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Application Information

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IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0638G06F3/0656G06F3/0679
Inventor 伍卫国宫继伟解超聂世强张驰张晨
Owner XI AN JIAOTONG UNIV
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