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Preparation method of semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor device preparation, can solve problems such as change, low film retention, and reduce the excellent rate of semiconductor devices, and achieve the effects of ensuring excellent rate, alleviating line width changes, and alleviating low film remaining.

Active Publication Date: 2022-08-02
CHANGXIN MEMORY TECH INC
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  • Application Information

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Problems solved by technology

However, in the process of photolithography development, when the anti-reflection layer material at the bottom of the photoresist is silicon oxynitride (SiON), the photoresist and the surface layer of SiON will have a low film retention phenomenon, which will lead to the line width after etching. Changes occur, which reduces the excellent rate in the process of semiconductor device manufacturing

Method used

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  • Preparation method of semiconductor device
  • Preparation method of semiconductor device
  • Preparation method of semiconductor device

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Embodiment Construction

[0051] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments, however, can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0052] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, such as according to the direction of the example described. It will be appreciated that if the device of the icon is turned upside down, the components described as "on" will become...

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Abstract

The present application relates to a method for preparing a semiconductor device, which includes: providing a target to be etched; sequentially forming a first mask layer, a first anti-reflection layer and a second mask layer on the surface of the target to be etched; In the reaction gas, the second anti-reflection layer is formed on the surface of the second mask layer; the photoresist mask pattern is formed on the surface of the second anti-reflection layer; A first reticle pattern is formed on the first anti-reflection layer; a dielectric layer is formed on the first anti-reflection layer and the first reticle pattern; other parts of the first anti-reflection layer except the sidewall are etched, to form a second intermediate mask pattern; using the second intermediate mask pattern as an etching mask, etching the first anti-reflection layer and the first mask layer to form a target pattern on the target to be etched. Such a design can alleviate the phenomenon of low film retention of the photoresist and the second anti-reflection layer, and ensure the good rate in the fabrication process of the semiconductor device.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for preparing a semiconductor device. Background technique [0002] As the size of semiconductor devices continues to shrink, the pattern transfer requirements in the lithography process are also more precise. Photoresist is an important tool to assist pattern transfer in the lithography process. With the reduction of lithography size, the requirements for resolution are getting higher and higher, resulting in the shift of lithography to deep ultraviolet and short wavelengths, such as: from 248nm to 193nm . However, in the process of photolithography and development, when the anti-reflection layer material at the bottom of the photoresist is silicon oxynitride (SiON), the photoresist and the surface layer of SiON will have a low film retention phenomenon, which will lead to the line width after etching. Changes occur, reducing the yie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11568
CPCH10B43/30
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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