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Solid-state imaging element and imaging device
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A technology of solid-state imaging elements and transistors, which is applied in the fields of electrical components, image communication, and color TV components, etc., which can solve the problems of extended stabilization time and achieve excellent wiring capacitance effects
Active Publication Date: 2022-05-13
SONY SEMICON SOLUTIONS CORP
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At this time, if a parasitic capacitance occurs on one of the vertical signal lines, the parasitic capacitance causes a prolongation of a settling time until the potential on the vertical signal line becomes constant.
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no. 1 example
[0064] 1. First Embodiment (Example of Connecting a Negative Capacitance Circuit to a Vertical Signal Line)
[0065] 2. Second Embodiment (Example of Connecting a Negative Capacitance Circuit Provided with an Amplifier with Small Gain to a Vertical Signal Line)
[0066] 3. Third Embodiment (Example in which a negative capacitance circuit including a two-way split transistor (two-way split transistor) is connected to a vertical signal line)
[0067] 4. Fourth Embodiment (Example of connecting a negative capacitance circuit including one of 2-way division transistors and an amplifier with a large gain to a vertical signal line)
[0068] 5. Fifth Embodiment (Example of Connecting a Negative Capacitance Circuit Sharing ADC and Capacitors to Vertical Signal Lines)
[0069] 6. Sixth Embodiment (Example of Connecting a Negative Capacitance Circuit Sharing a Sample Hold Circuit and a Capacitor to a Vertical Signal Line)
[0070] 7. Seventh Embodiment (Example of Connecting a Negativ...
Embodiment approach
[0335] (1) A solid-state imaging element comprising:
[0336] a logic circuit configured to process an analog signal;
[0337] a pixel circuit configured to generate the analog signal through photoelectric conversion, and output the analog signal to the logic circuit via a predetermined signal line; and
[0338] a negative capacitance circuit connected to the predetermined signal line.
[0339] (2) The solid-state imaging device according to (1), wherein the negative capacitance circuit includes:
[0340] an amplifier whose input terminal is connected to the predetermined signal line; and
[0341] a capacitor, the two terminals of which are respectively connected to the input terminal and output terminal of the amplifier.
[0342] (3) The solid-state imaging device according to (1), further comprising:
[0343] a current source connected to the predetermined signal line,
[0344] Wherein, the negative capacitance circuit includes:
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Abstract
The present invention can more easily reduce the wiring capacitance of the vertical signal lines in a solid-state imaging device that outputs signals via the vertical signal lines. This solid-state imaging element is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In this solid-state imaging device, the logic circuit processes an analog signal. In addition, in this solid-state imaging device, the pixel circuit generates the analog signal through photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In this solid-state imaging element, the negative capacitance circuit is connected to the predetermined signal line.
Description
technical field [0001] This technology relates to a solid-state imaging element and an imaging device. More specifically, the present technology relates to a solid-state imaging element and an imaging device in which vertical signal lines are arranged. Background technique [0002] In the past, solid-state imaging elements have been used in devices such as imaging devices to capture image data. Generally, in a solid-state imaging element, a plurality of pixel circuits are arranged in a two-dimensional matrix, and vertical signal lines are also arranged for each column. Also, the pixel circuits output signals via these vertical signal lines. At this time, if a parasitic capacitance occurs on one of the vertical signal lines, the parasitic capacitance causes prolongation of a settling time until the potential on the vertical signal line becomes constant. Therefore, in order to reduce the influence of parasitic capacitance, a solid-state imaging element has been proposed in ...
Claims
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