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A vcsel device for realizing polarization control and its preparation method

A polarization control and device technology, used in laser parts, lasers, electrical components, etc., can solve problems such as reducing energy conversion efficiency and increasing device manufacturing costs

Active Publication Date: 2020-09-01
VERTILITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are two problems in the technical solutions in the prior art: First, depositing gate-shaped metal on the surface of the light exit hole of the VCSEL will cause half or more light loss of the VCSEL device, resulting in a reduction in energy conversion efficiency
Second, depositing gate-shaped metal on the surface of the light exit hole of VCSEL will increase the manufacturing cost of the device

Method used

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  • A vcsel device for realizing polarization control and its preparation method
  • A vcsel device for realizing polarization control and its preparation method
  • A vcsel device for realizing polarization control and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiments of the present invention provide a VCSEL device and a manufacturing method thereof, such as figure 1 As shown, in this embodiment, the DBR high-aluminum component layer and the target oxide layer are etched and oxidized in different polarization directions to achieve structures with different oxidation lengths in different directions, so as to realize the two polarization directions of the VCSEL device. The effect of light control. The oxidation length refers to the inward oxidation length of the target oxide layer during the oxidation process. The device preparation method is as follows:

[0031] Step 1: Etching both sides of the epitaxial layer of the VCSEL device in the first direction to form two first channels, and oxidize from the first channel to the inside of the epitaxial layer to form a first oxide layer, and the oxidation time is X;

[0032] Step 2: Etching both sides of the epitaxial layer of the VCSEL device in the second direction to form two...

Embodiment 2

[0036] Embodiments of the present invention provide a VCSEL device and a manufacturing method thereof, such as figure 1 As shown, in this embodiment, the DBR high-aluminum component layer and the target oxide layer are etched and oxidized in different polarization directions to achieve structures with different oxidation lengths in different directions, so as to realize the two polarization directions of the VCSEL device. The effect of light control, the device preparation method is as follows:

[0037] Step 1: Etch both sides of the epitaxial layer of the VCSEL device in the first direction to form two first channels, and oxidize from the first channel to the inside of the epitaxial layer to form a first oxide layer on the sidewall of the first channel Protected by dielectric;

[0038] Step 2: Etching both sides of the epitaxial layer of the VCSEL device in the second direction to form two second channels, the mesa structure of the VCSEL device is defined by the first channe...

Embodiment 3

[0042] Embodiments of the present invention provide a VCSEL device and a manufacturing method thereof, such as figure 2 As shown, in this embodiment, the DBR high-aluminum component layer and the target oxide layer are etched and oxidized in different polarization directions to achieve a structure with different numbers of oxide layers in different directions, so as to achieve two polarizations of the VCSEL device. The effect of controlling the direction of light, the device preparation method is as follows:

[0043]Step 1: The epitaxial layer of the VCSEL device includes two or more target oxide layers, and the target oxide layers are separated by a stopper layer. The depth of the channel etch can be controlled by the stopper layer and the time of channel etching. The depth of the trench etch is used to control the amount of exposed sidewalls of the target oxide. Etching both sides of the first direction of the epitaxial layer of the VCSEL device forms two first trenches; t...

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Abstract

The invention discloses a VCSEL device for realizing polarization control and a preparation method thereof. A mesa structure is defined by two first channels on two sides of a first direction and twosecond channels on two sides of a second direction; the first channel and the second channel comprise first oxide layers and second oxide layers, the first oxide layers extend from the first channel to the interior of the mesa structure, and the second oxide layers extend from the second channel to the interior of the mesa structure; and the number of the first oxide layers is different from the number of the second oxide layers, and / or the oxidation length of the first oxide layers is different from the oxidation length of the second oxide layers. According to the technical scheme disclosed by the invention, different areas, different lengths and different layer numbers of the oxide layers cause different stresses in two directions, so that the energy conversion efficiency of the VCSEL isnot influenced, and the manufacturing cost of the VCSEL device can be reduced.

Description

technical field [0001] The invention belongs to the technical field of VCSEL chips, and in particular relates to a VCSEL device for realizing polarization control and a preparation method thereof. Background technique [0002] Vertical-Cavity Surface-Emitting Laser (Vertical-Cavity Surface-Emitting Laser, referred to as VCSEL, also translated as vertical resonant surface-emitting laser) is a semiconductor whose laser is emitted perpendicular to the top surface. There is a difference between edge-firing lasers in which the laser is emitted from the edge. VCSEL is currently widely used in 3D sensing, optical communication and optical storage because of its advantages of low power consumption and easy integration. [0003] Controlling the polarization direction of the VCSEL helps to increase mode stability, improve coherence and enable high degrees of freedom in optical shaping to control the transmission and reflection of emitted light through optical elements such as diffuse...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183
CPCH01S5/183H01S5/18344
Inventor 梁栋刘嵩张成
Owner VERTILITE CO LTD
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