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Storage structure and erasing method thereof

A storage structure, storage block technology, applied in information storage, static memory, read-only memory, etc., can solve the problem of low efficiency of non-volatile flash memory erasing

Active Publication Date: 2020-04-07
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a storage structure and erasing method thereof, to solve the problem of low efficiency of non-volatile flash memory overall erasing

Method used

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  • Storage structure and erasing method thereof
  • Storage structure and erasing method thereof
  • Storage structure and erasing method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0035] Based on, image 3 A schematic structural diagram of the storage structure provided in this embodiment. Such as image 3As shown, the storage structure 200 is, for example, Nor Flash (Nor Flash), which includes at least two storage banks, respectively the first storage bank Bank2 and the second storage bank Bank3, the first storage bank Bank2 and the second storage bank A total of n (n≥2) memory blocks are stored in the second memory bank Bank3, and the n memory blocks are evenly distributed between the first memory bank Bank2 and the second memory bank Bank3, and the memory blocks are arranged according to the numbering order times are alternately set in the first memory bank Bank2 and the second memory bank Bank3. For the convenience of description, the n storage blocks are numbered sequentially: B 1 , B 2 …B n , in this embodiment, n is an even number. In this way, odd-numbered memory block B 1 , B 3 …B n-1 Set in the first storage bank Bank2, the storage bl...

Embodiment 2

[0052] Different from Embodiment 1, in this embodiment, the first process includes a pre-programming step and an erasing step, and the second process includes an over-erasing repairing step. So memory block B i When performing the second process, only one step of the over-erased repair step has actually been performed; and the storage block B i+1 Executing the first process actually only executes the two steps of the pre-programming step and the erasing step in sequence.

[0053] Figure 5 A specific flow chart of the erasing method of the storage structure 200 provided in this embodiment. Next will combine image 3 and Figure 5 The erasing method of the storage structure 200 provided in this embodiment is described in detail.

[0054] Such as Figure 5 As shown, block B is first stored 1 Perform pre-programming steps and erasing steps in sequence; memory block B 1 After completing the pre-programming step and erasing step, memory block B 1 Execute the erase repair s...

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Abstract

The invention provides a storage structure and an erasing method thereof. Erasing operation can be performed on the storage blocks B1... Bn. N is an integer greater than or equal to 2. The storage structure comprises a first storage bank, a second storage bank and a controller; the storage blocks are sequentially and alternately arranged in the first storage bank and the second storage bank according to serial numbers, the controller is used for controlling the storage blocks to sequentially carry out erasing operation according to the serial numbers in a set erasing mode, and the erasing operation comprises a first process and a second process which are sequentially executed; the erasing mode comprises that when the storage block Bi executes the second process, the storage block Bi + 1 executes the first process, wherein i belongs to [1, n-1]. The two adjacent storage blocks synchronously carry out the first process and the second process, so that the erasing time of the whole storagestructure is saved, the erasing efficiency is improved, no extra circuit is needed, and the method can be implemented under the condition that the cost is not increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a storage structure and an erasing method thereof. Background technique [0002] The main characteristics of flash memory are fast working speed, small unit area, high integration, good reliability, rewritable more than 100,000 times, and reliable data retention for more than 10 years, so that it can be embedded in a large number of circuits instead of other memories. Currently, the two main types of flash memory on the market are non-volatile flash memory with NOR structure and NAND structure. Among them, NOR flash memory (Nor Flash) has a small cell area and short read (write) operation time, so it is widely used. The current mainstream Nor Flash is based on floating gate flash memory technology. In order to save area, its storage area is generally placed in a matrix form, and then logically divided into many storage blocks (Block). The units are sequentially era...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/14G06F3/06
CPCG11C16/14G06F3/0652G06F3/064G06F3/0658G11C16/16G11C16/3477G11C16/32G11C16/3468G11C16/102G11C16/345
Inventor 郑钟倍
Owner WUHAN XINXIN SEMICON MFG CO LTD