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Light emitting device and projector

A technology for light-emitting devices and projectors, which can be used in projection devices, instruments, optics, etc., and can solve problems such as the reduction of light-emitting efficiency of light-emitting devices.

Pending Publication Date: 2020-04-07
SEIKO EPSON CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such crystal defects cause current leakage and reduce the luminous efficiency of the light emitting device

Method used

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  • Light emitting device and projector
  • Light emitting device and projector
  • Light emitting device and projector

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Experimental program
Comparison scheme
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no. 2 Embodiment approach

[0096] 2.1. Lighting device

[0097] Next, a light emitting device according to a second embodiment will be described with reference to the drawings. Figure 6 It is a cross-sectional view schematically showing the light emitting device 200 of the second embodiment. Figure 7 It is a cross-sectional view schematically showing a first semiconductor layer 32 , an MQW (multi quantum well: multiple quantum well) layer 35 , and a second semiconductor layer 36 of the light emitting device 200 .

[0098] Hereinafter, in the light emitting device 200 of the second embodiment, components having the same functions as those of the components of the light emitting device 100 of the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0099] In the light emitting device 100 described above, the columnar portion 30 has the SQW layer 34 . In contrast, in the light emitting device 200 , the columnar portion 30 has the MQW layer 35 . ...

no. 3 Embodiment approach

[0104] Next, a projector according to a third embodiment will be described with reference to the drawings. Figure 8 It is a figure which schematically shows the projector 1000 of 3rd Embodiment.

[0105] Projector 1000 has the light emitting device of the present invention. In the following, a case where the light emitting device 100 is provided as the light emitting device of the present invention will be described.

[0106] Such as Figure 8 As shown, the projector 1000 has a light emitting device 100 as a light source, a light modulation element 120 , a cross dichroic prism 130 , and a projection lens 140 . Although not shown, projector 1000 also has a housing. The housing accommodates the light emitting device 100 , the light modulation element 120 , the cross dichroic prism 130 and the projection lens 140 .

[0107] Projector 1000 includes red light source 100R, green light source 100G, and blue light source 100B that emit red light, green light, and blue light, resp...

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Abstract

Provided are a light emitting device and a projector. The light emitting device includes a substrate, and a laminate provided to the substrate and including a plurality of columnar portions, where each of the columnar portions includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a facet surface, a c surface, and an m surface, the light emitting layer includes a facetsurface region provided to the facet surface, and a c surface region provided to the c surface, the light emitting layer does not include a region provided to the m surface, and the c surface region is larger than the facet surface region in a plan view as viewed from a laminating direction of the laminate.

Description

technical field [0001] The invention relates to a light emitting device and a projector. Background technique [0002] Semiconductor lasers are expected to become the next-generation light source with high brightness. In particular, it is expected that semiconductor lasers having nanostructures called nanocolumns, nanowires, nanorods, nanopillars, etc. can realize light-emitting devices that can be obtained by utilizing the effect of photonic crystals. Narrow radiation angle and high output light emission. [0003] For example, Patent Document 1 describes a nanowire having a pyramid-shaped end. The pyramid-like extremities are formed by p-planes as facets. The nanowire is made of, for example, a material containing gallium nitride, and a light emitting region made of indium gallium nitride is formed on the nanowire. In addition, a semiconductor layer is formed on the light emitting region, the semiconductor layer is a material containing gallium nitride, and has a conduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/32H01S5/323H01S5/34H01S5/343H01L33/00H01L33/06H01L33/24H01L33/28G03B21/20
CPCH01S5/32H01S5/3408H01S5/34333H01S5/32341H01L33/0012H01L33/06H01L33/24H01L33/285G03B21/2033H01S2301/173H01S5/341H01S5/04252H01S5/183H01S2304/12H01S5/4012H01S5/11H01S5/3086H01S5/3063H01S5/34346
Inventor 野田贵史岸野克巳
Owner SEIKO EPSON CORP