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High-speed level shifter circuit with high dv/dt suppression capability

A technology of level shift and suppression capability, applied in the field of gate drive, can solve the problems of high power consumption, weak dv/dt suppression capability, etc., to improve the circuit response speed, high static power consumption, and overcome the problem of low response speed Effect

Active Publication Date: 2020-05-08
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]The conversion speed of the traditional level shifter mentioned above is limited by the speed of the slow response path, high power consumption caused by quiescent current, and weak dv / dt suppression ability etc., the present invention proposes a level shifter circuit with high-speed and high dv / dt suppression ability, which uses a digital detection module to sample the fast path, and the reversal of the input signal is responded by the fast path, which solves the problem of the slow path to the circuit response speed Influenced by the high speed, zero static power consumption can be achieved at the same time. In addition, it can have a high dv / dt suppression ability without adding additional complex auxiliary circuits.

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  • High-speed level shifter circuit with high dv/dt suppression capability
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  • High-speed level shifter circuit with high dv/dt suppression capability

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Embodiment Construction

[0029] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0030] The present invention proposes a level shifter circuit with high speed and high dv / dt suppression capability, including a power rail conversion module, a digital detection module and an RS latch module, wherein the power rail conversion module includes LDMOS (M1-M4) and low voltage MOSFET ( M5-M8), LDMOS converts the signal in the low-voltage area to the high-level voltage area, and the high-voltage area uses a low-voltage MOSFET to process the signal. The relative ground and relative power of the low-voltage area are the low power rail relative to VSSL and the low power rail relative to the power supply VDDL, phase-to-ground and phase-to-supply of the high-voltage region are the high-power rail to ground VSSH and the high-power rail to power VDDH. Such as figure 1 Shown is the structure of the power rail conversion module, including t...

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Abstract

The invention discloses a high-speed level shifter circuit with high dv / dt suppression capability, which comprises a power supply rail conversion module, a digital detection module and an RS latch module, wherein the power supply rail conversion module converts a signal of a low voltage area into a signal of a high level voltage area by using an LDMOS, and processes the signal of the high voltagearea by using a low voltage MOSFET; the digital detection module is used for detecting changes of signals of a first output end and a second output end of the power supply rail conversion module and rapidly transmitting the signals to the RS latch module; and the RS latch module is used for stabilizing the output signal at a set level value so as to prevent misoperation caused by interference. According to the invention, the digital detection module samples a fast path, an input signal is always firstly responded by the fast path, the response speed of the output is decided, and the circuit response speed is improved. In addition, zero static power consumption and high dv / dt suppression capability are realized while the high speed is realized, and the circuit can be widely applied to driving circuits with high requirements on power consumption, speed and dv / dt suppression capability.

Description

technical field [0001] The invention belongs to the technical field of gate driving of high-voltage power devices, and in particular relates to a level shifter circuit with high speed and high dv / dt suppression capability. Background technique [0002] With the advent of artificial intelligence and the 5G era, the performance requirements for power supply systems are getting higher and higher. Among them, related technologies such as driving circuits in the power supply system are very critical. In the existing process, the parasitic effect of high-voltage LDMOS is much larger than that of low-voltage MOSFET. Therefore, low-voltage MOSFETs are often used in the design of drive circuits. This approach can improve the driving performance on the one hand, and on the other hand can reduce the chip area to save design costs. Therefore, the level shifter becomes a very critical sub-module of the drive circuit. [0003] At present, the use of wide bandgap semiconductors has bec...

Claims

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Application Information

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IPC IPC(8): H03K19/0175H03K19/0185H03K19/017H03K19/00
CPCH03K19/017509H03K19/018507H03K19/017H03K19/0013
Inventor 周泽坤曹建文王卓唐鹤张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA