Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material

A technology of silicon heterojunction and photodetector, which is applied in the field of high-sensitivity and anti-radiation photodetector, ultra-fast response, and wide frequency band, which can solve the problem of insufficient light response speed, insufficient sensitivity, and easy damage of the detector core and other issues, to achieve the effect of ultra-fast photoresponse, strong radiation resistance, and small capacitance
CN1892191AInactive Publication Date: 2007-01-10INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2007-01-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to photodetector made of doping oxide and silicon heterojunction material, with ultra-fast responding, broadband, high sensitivity and anti-radiation. It contains casing, optical sensor, first electrode, second electrode, two electrode leading wires, insulating piece, first metal block, second metal block and metal bolt; wherein said optical sensor consisting of one or more of series connected doping oxide and silicon heterojunction material decetor chip and installed in one metal enclosure, leading out output port by coaxial cable coaxial cable joint, said decetor being photoproduction volt type photoelectric detector, directly generating voltage alarm by light radiating without any auxiliary accessory power supply and electronic circuit. Its responding wave band is from ultraviolet to far infrared, capable of responding femtosecond pulse width laser pulse, response speed reaching ps, capable of detecting pulsed laser waveform with hundred of ps pulsewidth. Said invention has very high sensitivity and strong radioresistance ability.
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Description

technical field

[0001] The invention relates to a photodetector, in particular to an ultrafast response, wide frequency band, high sensitivity and anti-radiation photodetector made of doped oxide and silicon heterojunction materials. Background technique

[0002] The detection of light energy, power, pulse width and waveform has a very wide range of applications in scientific research, military, national defense, production and life. Although people have developed many different types of photodetectors, such as pyroelectric, photoelectric, pyroelectric, etc., the work on new photodetectors is still an interesting and ongoing work. The applicant has also obtained the following several laser detector patents in this respect, such as patent number: ZL89202869.6; patent number: ZL89220541.5; The patented detectors are all made of piezoelectric materials, and the photoresponse of the detectors is not fast enough. The applicant has also applied for a photodetector patent using a...

Claims

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