Fast response broad frequency range laser detector made of hetero-junctions material

A laser detector and fast-response technology, applied in the field of laser detectors, can solve the problems of inability to detect and measure the laser pulse pulse laser waveform, the response band is not wide enough, and the light response of the detector is not fast enough.

Inactive Publication Date: 2006-01-18
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although people have developed many different types of laser detectors such as pyroelectricity, photoelectricity, pyroelectricity, etc., the work for novel laser detectors is still people's interest and ongoing work, and the applicant is also in this regard Obtained the following patents for laser detectors, such as patent number: ZL89202869.6; patent number: ZL89220541.5; patent number: ZL90202337.3, patent number: ZL90205920.3; The photoresponse of the detector is not fast enough, and the response band is not wide enough.
[0003] People have done a lot of research on the giant magnetoresistance properties of doped lanthanum manganate materials, and recently people have also observed the photoelectric properties of doped lanthanum manganate films, but the pulse width is in the order of ms (such as literature 1, Time dependence of laser-induced thermoelectric voltages in la 1-x Ca x MnO 3 and YBa 2 Cu 3 o 7-δ thinfilms, P.X.Zhang et al., Appl.Phys.Lett., Vol.84, No.21, 4026 (2002)), so it cannot be used to detect and measure pulsed laser waveforms with laser pulse widths less than ms

Method used

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  • Fast response broad frequency range laser detector made of hetero-junctions material
  • Fast response broad frequency range laser detector made of hetero-junctions material
  • Fast response broad frequency range laser detector made of hetero-junctions material

Examples

Experimental program
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Effect test

Embodiment 1

[0023] refer to figure 1 , to prepare a laser detector with a silicon-doped lanthanum manganate two-layer structure, and prepare it in conjunction with the specific manufacturing process below: to describe in detail the structure of the fast-response broadband laser detector made of heterojunction materials in the present invention, select laser molecules Beam epitaxy equipment, the substrate is an n-type silicon wafer 1, on which a 300nm-thick, p-type La 0.7 Sr 0.3 MnO 3 Photoresponsive material layer 2, forming La 0.7 Sr 0.3 MnO 3 / Si two-layer heterostructure sample, cut into a size of 1 × 1 cm 2 The detector core; use hydrofluoric acid to remove the silicon oxide on the silicon surface, weld the second electrode 4 of about φ2mm on the silicon surface with indium, and use indium on the La 0.7 Sr 0.3 MnO 3 Weld the first electrode 3 of about φ1mm on the surface of one corner of the film; use two φ0.1mm copper wires as electrode leads 6, and weld one end of the two φ0...

Embodiment 2

[0027] Laser molecular beam epitaxy equipment was selected to directly epitaxially grow 100nm thick, p-type La 0.7 Sr 0.3 MnO 3 Thin film photoresponsive material layer 2, prepared La 0.7 Sr 0.3 MnO 3 The / Si two-layer heterostructure sample is used as a chip, and a 2-inch chip is used to assemble the laser detector with the same two-layer structure as in Example 1.

Embodiment 3

[0029]Using a laser molecular beam epitaxy device, a layer of SrO was used as a buffer layer to epitaxially grow 800nm ​​thick La on n-type silicon. 0.95 Ba 0.05 MnO 3 Thin film photoresponsive material layer 2, forming La 0.95 Ba 0.05 MnO 3 / Si two-layer heterostructure chip, in La 0.95 Ba 0.05 MnO 3 One edge of the thin film layer is vacuum-evaporated with a 0.5 mm wide platinum first electrode 3, and the rest is the same as the fast-response broadband laser detector made of heterojunction materials prepared according to Example 1.

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Abstract

The invention relates to a fast responding and wide frequency band laser detector, which is made by hetero-junctions material. It comprises a chip made by the optical responding material layer of silicon sheet, first electrode, second electrode and lead wire, wherein the optical responding layer is a lanthanum magnetite layer which is expitaxial grew at silicon bulk; first electrode is positioned on the lanthanum magnetite layer; while second electrode is positioned on the silicon sheet; one end of the two lead wires are separately connected with first electrode and second electrode; while the other end is signal output end. The detector is optical volt type photoelectric cell. It can response the laser pulse of femtosecond pulse width and then produce voltage pulse with the leading edge less than 1ns, half-width less than 2ns and pulse all-width at several ns.

Description

technical field [0001] The invention relates to a laser detector, in particular to a fast-response broadband laser detector made of heterojunction materials. Background technique [0002] The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and scientific research, but also has a very wide range of applications in military, national defense, production and life. Although people have developed many different types of laser detectors such as pyroelectricity, photoelectricity, pyroelectricity, etc., the work for novel laser detectors is still people's interest and ongoing work, and the applicant is also in this regard Obtained the following patents for laser detectors, such as patent number: ZL89202869.6; patent number: ZL89220541.5; patent number: ZL90202337.3, patent number: ZL90205920.3; Made of electrical materials, the photoresponse of the detector is not fast enough, and the response band is not wide enough. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J11/00
Inventor 吕惠宾黄延红何萌郭海中金奎娟程波林周岳亮陈正豪杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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