Super-fast wide-wave-band optical detector made by doped oxide and silicon heterojunction material
A silicon heterojunction, photodetector technology, used in ultra-fast response, high sensitivity and radiation-resistant photodetectors, and broadband fields, can solve the problem that the photoresponse speed is not fast enough, the sensitivity is not high enough, and the detector core is easily damaged. and other problems, to achieve the effect of ultra-fast light response, strong radiation resistance, and small capacitance
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Embodiment 1
[0029] Referring to Figure 1, a light sensor chip 1 is made from a piece of doped lanthanum manganese oxide and silicon heterojunction material to prepare an ultra-fast wide-band high-sensitivity light detector.
[0030]In this embodiment, a substrate is an n-type silicon wafer, and a 300nm thick, p-type La is directly epitaxially grown on it. 0.7 Sr 0.3 MnO 3 Light-responsive material layer, forming La 0.7 Sr 0.3 MnO 3 / Si two-layer heterogeneous material, cut the heterojunction material into a size of 1×0.2cm 2 The light sensor chip 1; use hydrofluoric acid to remove the silicon oxide on the silicon surface, use indium to solder the second electrode 3 of about φ2mm on the silicon surface of the light sensor chip 1, and use indium on the La of the light sensor chip 1 0.7 Sr 0.3 MnO 3 The surface of the film is welded with the first electrode 2; two φ0.1mm copper wires are used as electrode leads, and two ends of the first electrode lead 4 and the second electrode lead 4'of φ0.1mm...
Embodiment 2
[0034] reference figure 2 , Select a 2-inch p-type silicon wafer, and directly epitaxially grow 100nm thick, n-type La on it 0.7 Te 0.3 MnO 3 The thin film is used to prepare heterojunction materials. After removing the oxide layer on the Si surface with FH, vacuum coating is used to coat the La 0.7 Te 0.3 MnO 3 And the Si surface is vapor-deposited with a silver film, and the La 0.7 Te 0.3 MnO 3 / Si two-layer heterogeneous material is cut into a 10mm×2mm rectangle as the detector chip, and the three detector chips are connected in series to make the light sensor chip 1, in which the La of the first detector chip 0.7 Te 0.3 MnO 3 The surface of the thin film is in contact with the silicon substrate surface of the second photodetector chip and is laminated, by analogy, the La of the first photodetector chip after the stacking 0.7 Te 0.3 MnO 3 The first electrode 2 of φ0.2mm copper wire is welded on the surface of the film; the second electrode 3 of φ2mm is welded on the silicon su...
Embodiment 3
[0036] reference image 3 , Choose to make a layer of SrO buffer layer on the n-type silicon substrate, and then epitaxially grow 800nm thick La 0.95 Ba 0.05 MnO 3 Thin film, using vacuum coating method in La 0.95 Ba 0.05 MnO 3 The surface of Si and Si are respectively plated with platinum film, and the La 0.95 Ba 0.05 MnO 3 / Si heterojunction material is cut into 15mm×3mm rectangular pieces as photodetector chips, using 8 pieces of 15mm×3mm La 0.95 Ba 0.05 MnO 3 / Si photodetector chips are connected in series to make photosensor chip 1, the La of the first photodetector chip 0.95 Ba 0.05 MnO 3 The surface of the film is in contact with the surface of the silicon substrate of the second photodetector chip, and by analogy, the side surface of the photodetector chip 1 is used as the incident surface of the detected light. The outermost La 0.95 Ba 0.05 MnO 3 The thin film serves as the first electrode 2, and the outermost n-type silicon substrate serves as the second electrode 3. T...
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