Bulk layer transfer processing with backside silicidation

A body and semiconductor technology, applied in the field of body layer transfer processing, can solve the problems of increasing cost, expensive SOI wafers and processing substrates, etc.

Pending Publication Date: 2020-05-08
QUALCOMM INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While increasing the spacing between the switching device and the underlying substrate can greatly improve the RF performance of a CMOS switch, using HR silicon or sapphire t

Method used

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  • Bulk layer transfer processing with backside silicidation
  • Bulk layer transfer processing with backside silicidation
  • Bulk layer transfer processing with backside silicidation

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Embodiment Construction

[0019] The detailed description set forth below, in conjunction with the accompanying figures, is intended as a description of various configurations and is not intended to represent the only configurations in which the concepts described herein may be practiced. The detailed description includes specific details in order to provide a thorough understanding of various concepts. It will be apparent, however, to one skilled in the art that these concepts may be practiced without these specific details. In some instances, well-known structures and components are shown in block diagram form in order to avoid obscuring the concepts.

[0020] As used herein, the use of the term "and / or" is intended to mean an "inclusive or" and the use of the term "or" is intended to mean an "exclusive or". As described herein, the term "exemplary" is used throughout the specification to mean "serving as an example, instance or illustration" and should not necessarily be construed as preferred or a...

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Abstract

A radio frequency integrated circuit (RFIC) includes a bulk semiconductor die. The RFIC also includes a first active/passive device on a first-side of the bulk semiconductor die, and a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die. The RFIC also includes a contact layer on the second-side of the bulk semiconductor die. The RFIC further includes a second-side dielectric layer on the contact layer. The first deep trench isolation region may extend through the contact layer and into the second-side dielectric layer.

Description

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Claims

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Application Information

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Owner QUALCOMM INC
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