Data integration method, memory storage device and memory control circuit unit

A memory and memory module technology, applied in the direction of memory systems, electrical digital data processing, instruments, etc., can solve the problems of increasing the access times of memory storage devices, accelerating the loss of memory storage devices, etc., reducing the number of access times and improving the service life Effect

Active Publication Date: 2022-03-29
PHISON ELECTRONICS
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the data integration program, if the logical units mapped to the multiple physical units selected as source nodes are more scattered, the more tables that record the management information (such as mapping information) of these logical units need to be accessed , thereby increasing the access times of the memory storage device and accelerating the wear and tear of the memory storage device (such as a storage unit)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data integration method, memory storage device and memory control circuit unit
  • Data integration method, memory storage device and memory control circuit unit
  • Data integration method, memory storage device and memory control circuit unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0099] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module (rewritable non-volatile memory module) and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0100] figure 1 It is a schematic diagram showing a host system, a memory storage device and an input / output (I / O) device according to an exemplary embodiment of the present invention. figure 2 It is a schematic diagram showing a host system, a memory storage device and an I / O device according to another exemplary embodiment of the present invention.

[0101] Please refer to figure 1 and figure 2 , the host system 11 generally includes a processor 111 , a random access memory (random access memory, RAM) 112 , a read only memory (read only memory, ROM) 113 and a data transmission interface 114 . The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An exemplary embodiment of the present invention provides a data integration method for a rewritable nonvolatile memory module, wherein the rewritable nonvolatile memory module includes a plurality of physical units. The method includes: obtaining a first logical distance value between a first physical unit and a second physical unit in the physical units, wherein the first logical distance value reflects at least one physical unit mapped to the first physical unit. Logical dispersion between the first logical unit and at least one second logical unit mapped to the second physical unit; and performing a data integration operation according to the first logical distance value, so as to copy valid data from the source node to the recycling node.

Description

technical field [0001] The invention relates to a flash memory technology, in particular to a data integration method, a memory storage device and a memory control circuit unit. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for built-in Among the various portable multimedia devices listed above. [0003] When the memory storage device leaves the factory, some of the physical units in the memory storage device are configured as a plurality of idle physical units, so that these idle physical units are used to store new data. After a period of use, the number of idle physical units in the memory storage device will gradually decrease. Memory storag...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
CPCG06F12/0253G06F2212/1036
Inventor 陈建文林庭玮
Owner PHISON ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap