Giant territory split border exposure simulation and optical near -neighbor correction method
A secondary exposure and layout technology, which is applied in photolithography process exposure devices, optics, microlithography exposure equipment, etc., can solve the problem of the first exposure affecting the process risk and so on
Active Publication Date: 2022-08-09
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a double-exposure simulation and optical neighbor correction method for a giant layout split boundary, which is used to solve the need for split implementation of the giant-size layout in the prior art. In the process of the second exposure, the second exposure has an impact on the first exposure and there are problems of process risk
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[0030] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0031] see Figure 1 to Figure 7 . It should be noted that the drawings provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be arbitrarily chang...
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Abstract
The invention provides a method for simulating double exposure of a split boundary of a giant layout and an optical neighbor correction method, and provides a plurality of mask options for model setting of double exposure, and each mask option includes two mask layers and a background. Layer option, the two mask layers are respectively defined as the mask layer and the area other than the mask layer and the background layer; correspondingly specified in the OPC script; Resolve the auxiliary graphics back to the non-overlapping state; perform OPC preprocessing to set the width of the overlapping area between the two adjacent mask layers; freeze the mask segments that do not converge. By adopting the double exposure simulation and optical neighbor correction method of the giant layout split boundary of the present invention, after OPC correction, the size of the mask plate in the overlapping area is verified by simulated imaging, and the correction method is feasible. The OPC-corrected reticle size is model-friendly and the process window simulation is not degraded after the correction.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for simulating double exposure of a split boundary of a giant layout and correcting its optical neighbors. Background technique [0002] For some extremely large size layouts, when the layout exceeds the maximum size allowed by one exposure, it needs to be split into multiple layouts to be exposed separately, and then the multiple exposure patterns are spliced into a complete layout. At the junction of adjacent exposure ranges, there will be a double exposure (LLE) situation, compared to a litho-etch-litho-etch (LELE) process or a litho-freeze- Litho-freeze-litho-etch (LFLE) process, LLE process is simple and cheap, but the disadvantage is that the second exposure will have a great impact on the first exposure, and it is difficult to predict and control the risk. [0003] Therefore, for the situation where the extremely large-scale layout spans multiple expo...
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IPC IPC(8): G03F7/20
CPCG03F7/70441
Inventor 李葆轩于世瑞
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD