Error page identification method based on three-dimensional flash memory storage structure
A flash memory storage and identification method technology, applied in the direction of response error generation, error detection/correction, redundant code error detection, etc., can solve the problems of high hardware cost, low practicability, and low space utilization, etc. The effect of reducing error rate and improving response time
Inactive Publication Date: 2020-06-05
SUZHOU UNIV
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[0006] Although the existing technology reduces the error rate of data storage to a certain extent and improves the reliability of the three-dimensional flash memory storage system, there are still problems such as low space utilization, low practicability and high hardware cost.
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[0029] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.
[0030] In order to improve the reliability of the 3D flash storage system, the problem of increased error rate is particularly obvious. In the three-dimensional flash memory storage system, Open-Channel SSD (OCSSD) is taken as an example. It moves the translation layer (FlashTranslation Layer, FTL) in the flash memory storage structure to the Host side, and through the dedicated interface PPA (Physical Page Address) I / O interface Expose the physical structure information of the underlying device directly to the upper user space. The underlying physical information is already known before the underlying devices are used in the upper space, but under the traditional flash memory sto...
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The invention discloses an error page identification method based on a three-dimensional flash memory storage structure, which is called an error page identification technology, can accurately identify the error rate of all physical pages in a current three-dimensional flash memory storage system, and can effectively improve the reliability of the three-dimensional flash memory storage system. A storage basic unit of the three-dimensional flash memory storage system mainly takes a TLC as a storage medium; compared with SLC and MLC, the TLC is worst in reliability and the service life due to the structural characteristics of the TLC. The reading speed of all physical pages under an OCSSD structure of the three-dimensional flash memory storage system represents the error rate of the physicalpages, and a machine learning method is used for carrying out reliability grade classification on all the physical pages, wherein the lower the grade is, the higher the error rate is. And the physical pages with high error rate are removed for real-time data migration, so the error rate is effectively reduced, and the purpose of improving the reliability of the three-dimensional flash memory storage system is achieved.
Description
technical field [0001] The invention relates to the field of three-dimensional flash memory storage structures, in particular to an error page identification method based on a three-dimensional flash memory storage structure. Background technique [0002] Compared with SLC (Single Level Cell) and MLC (Multiple Level Cell) flash memory devices, TLC (Triple Level Cell) flash memory devices have higher storage density and lower cost, especially for use in three-dimensional flash memory storage systems more extensive. The 3D stacking technology is adopted in the three-dimensional flash memory storage system, that is, the basic units of TLC flash memory are stacked vertically, so that the reliability of the flash memory storage is continuously declining while the storage density of the flash memory is rapidly increasing. [0003] The traditional technology has the following technical problems: [0004] In order to reduce the error rate stored in the three-dimensional flash memo...
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IPC IPC(8): G06F11/10
CPCG06F11/1048
Inventor 黄敏杜雅芝肖仲喆吴迪顾济华
Owner SUZHOU UNIV