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A non-volatile memory control method and device

A non-volatile memory, controller technology, applied in static memory, read-only memory, information storage and other directions, can solve the problem of long byte programming and low efficiency

Active Publication Date: 2022-03-01
GIGADEVICE SEMICON (BEIJING) INC
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above problems, the present invention provides a non-volatile memory control method and device, which solves the problem that in the prior art, when programming or erasing non-volatile memory, only the lowest-efficiency byte programming method and the longest The problem of unit pressurization time

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  • A non-volatile memory control method and device

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Embodiment Construction

[0050] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, only a part of the embodiments of the present invention, not all the embodiments, and are not intended to limit the present invention.

[0051] refer to figure 1 , shows a flow chart of a nonvolatile memory control method, the nonvolatile memory includes a power supply input terminal, a voltage detection circuit and a controller, the voltage detection circuit is connected to the power supply input terminal and the controller, and controls the nonvolatile memory The specific method may include the following steps:

[0052] Step 101: the controller receives an operation instruction.

[0053] refer to Figure 5 , in t...

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Abstract

The invention relates to a non-volatile memory control method and device. The invention relates to the field of non-volatile memory. The method includes: the controller receives an operation instruction, and the controller receives the voltage detection circuit to detect the target of the power input terminal voltage value, the controller adjusts the non-volatile memory to the target operating parameter corresponding to the preset target voltage value according to the preset correspondence between the voltage value and the operating parameter, and the controller performs the operation according to the operating parameter the above operating instructions. The present invention provides a non-volatile memory control method and device. The erasing / programming controller inside the non-volatile memory can adjust the programming mode during the programming operation and the programming or erasing operation according to the change of the external power supply voltage. The unit pressurization time is dynamically adjusted, so that the non-volatile memory always works at the highest efficiency, thereby improving the user's work efficiency.

Description

technical field [0001] The invention relates to the field of nonvolatile memory, in particular to a nonvolatile memory control method and device. Background technique [0002] At present, the data of non-volatile memory is stored in the storage unit in the form of bits. For SLC (Single-Level Cell), one unit stores one bit, and MLC (Multi-Level Cell) stores two bits in one unit. TLC (Tripple Level Cell) is a unit that stores three bits. These units form a byte in units of 8, and several bytes form a page. Non-volatile memory reads and writes data in units of pages, and uses blocks as units. unit to erase data. [0003] The operating voltage of non-volatile memory has a range. For example, the operating voltage of 3V non-volatile memory is 2.7V-3.8V, the operating voltage of 1.8V is 1.65V-2.1V, and the operating voltage of wide-voltage non-volatile memory is 1.8V. V~3.6V, the charge pump inside the non-volatile memory can provide different currents according to different ope...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/30
CPCG11C16/30
Inventor 张建军陈晓璐
Owner GIGADEVICE SEMICON (BEIJING) INC