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Gate driver integrated circuit and method of forming the same

An integrated circuit, gate drive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of inability to reduce the size, high production cost, large chip size, etc.

Active Publication Date: 2022-08-02
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a gate drive integrated circuit to solve the problem that the size of the existing gate drive integrated circuit cannot be reduced, resulting in a larger corresponding chip size and higher manufacturing costs

Method used

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  • Gate driver integrated circuit and method of forming the same
  • Gate driver integrated circuit and method of forming the same
  • Gate driver integrated circuit and method of forming the same

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Embodiment Construction

[0041] As described in the background art, in the existing gate driver integrated circuit, the field plate structure provided is a multi-level field plate structure, which not only has a high height, but also causes a relatively high gap between the top surface of the field plate structure and the substrate surface. A large step height difference is required, and the multi-level field plate structure usually needs to have a large width dimension, so that the corresponding chip size cannot be reduced, and the production cost of the product is high.

[0042] figure 1 is a schematic diagram of the structure of a gate driver integrated circuit, such as figure 1 As shown, the gate driver integrated circuit includes:

[0043] A substrate 100, in which a drift region 110N of a first doping type is formed, and the drift region 110N extends from the top surface of the substrate to the interior of the substrate;

[0044] a field effect transistor, the field effect transistor includes ...

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Abstract

The present invention provides a gate driving integrated circuit and a method for forming the same. In the gate driving integrated circuit, the plurality of first conductive layers of the field plate structure are arranged in a single layer in a single structure layer, so that the field plate structure forms a single-layer field plate structure. And, the plurality of first conductive layers in the single-layer field plate structure can be sequentially coupled along the direction from the drain region to the source region to realize coupling voltage division, thereby improving the voltage withstand performance of the device; and the preparation of the single-layer field plate structure The process is more concise, and the step height difference between the field plate structure and the substrate can be greatly reduced, thereby facilitating the reduction of device size.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a gate driver integrated circuit and a method for forming the same. Background technique [0002] The high-voltage gate driver integrated circuit is the product of the combination of power electronic device technology and microelectronics technology, and is a key component of mechatronics. High-voltage gate driver ICs are widely used, such as electronic ballasts, motor drives, dimming, and various power modules. [0003] The high-voltage gate driver integrated circuit generally includes a high-side drive control module, a low-side drive control module and a level shift module. Among them, the low-voltage side drive control module works under the conventional voltage as the control signal part; the high-voltage side drive control module mainly includes the high-voltage control signal part; and the level shift module is used to realize the transmission of the l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L29/7816H01L29/402H01L29/66681
Inventor 喻兰芳罗海龙李伟
Owner NINGBO SEMICON INT CORP
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