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Gate drive integrated circuit and forming method thereof

An integrated circuit and gate drive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high manufacturing cost, large chip size, and inability to reduce the size, and achieve low manufacturing cost, simplified manufacturing method, and reduced size. Effect

Active Publication Date: 2020-06-23
NINGBO SEMICON INT CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a gate drive integrated circuit to solve the problem that the size of the existing gate drive integrated circuit cannot be reduced, resulting in a larger corresponding chip size and higher manufacturing costs

Method used

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  • Gate drive integrated circuit and forming method thereof
  • Gate drive integrated circuit and forming method thereof
  • Gate drive integrated circuit and forming method thereof

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Embodiment Construction

[0041] As mentioned in the background, in the existing gate drive integrated circuits, the field plate structure is a multi-level field plate structure, which not only has a high height, but also causes a gap between the top surface of the field plate structure and the substrate surface. The large step height difference, and the multi-level field plate structure generally needs to have a relatively large width dimension, which will lead to the inability to reduce the corresponding chip size and increase the manufacturing cost of the product.

[0042] figure 1 It is a schematic structural diagram of a gate drive integrated circuit, such as figure 1 As shown, the gate drive integrated circuit includes:

[0043] A substrate 100, wherein a drift region 110N of a first doping type is formed in the substrate 100, and the drift region 110N extends from the top surface of the substrate to the interior of the substrate;

[0044] a field effect transistor, the field effect transistor ...

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Abstract

The invention provides a gate drive integrated circuit and a forming method thereof. A plurality of first conductive layers of a field plate structure in the gate drive integrated circuit are arrangedin a single structure layer in a single layer, so that the field plate structure forms a single-layer field plate structure. In addition, the plurality of first conductive layers in the single-layerfield plate structure can be sequentially coupled along the direction from a drain region to a source region to realize coupling voltage division, so that the voltage withstanding performance of the device is improved. Moreover, the preparation process of the single-layer field plate structure is simpler, and the step height difference between the field plate structure and a substrate can be greatly reduced, thereby facilitating the reduction of the device size.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gate drive integrated circuit and a forming method thereof. Background technique [0002] High-voltage gate drive integrated circuits are the product of the combination of power electronic device technology and microelectronic technology, and are the key components of mechatronics. High-voltage gate driver integrated circuits are widely used, such as electronic ballasts, motor drives, dimming, and various power modules. [0003] A high-voltage gate drive integrated circuit generally includes a high-side drive control module, a low-side drive control module, and a level shifter module. Among them, the low-voltage side drive control module works under the normal voltage as the control signal part; the high-voltage side drive control module mainly includes the high-voltage control signal part; and the level shift module is used to realize the transmission of the low-voltag...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L29/7816H01L29/402H01L29/66681
Inventor 喻兰芳罗海龙李伟
Owner NINGBO SEMICON INT CORP
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