Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory testing method, device and readable memory

A test method and memory technology, applied in static memory, instruments, etc., can solve problems such as coupling faults that cannot be tested, limit memory test methods, etc., and achieve the effect of reducing test costs, wide application range, and reducing storage space.

Active Publication Date: 2022-03-15
ACTIONS ZHUHAI TECH CO
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] For most of the faults, the traditional memory test method can be tested, but for some coupling faults may not be tested
For example, several storage bits of a storage unit jump to 0 or 1 at the same time. This kind of fault cannot be tested by traditional memory test methods, because the data written and read by traditional memory test methods has its own rules. , thus limiting the application of the memory test method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory testing method, device and readable memory
  • Memory testing method, device and readable memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] First of all, some technical terms of this application are explained as follows:

[0060] Memory: a device that stores programs and data;

[0061] Storage bit: a storage unit that stores a binary digit, which is the smallest storage unit of the memory, or memory unit;

[0062] Storage word: when a number (n binary digits) is stored or retrieved as a whole, it is called a storage word;

[0063] Storage unit: several memory units storing a storage word form a storage unit;

[0064] Storage unit address: the number of the storage unit;

[0065] Addressing: Find data by address, and access data from the storage unit corresponding to the address;

[0066] Combination item: the result calculated by using the address and / or data of one or more storage units according to a certain method;

[0067] Combination sequence: a sequence in which the combination items are arranged as elements in a certain order;

[0068] Mapping value: the result obtained by using the preset mappi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a memory test method, device and readable memory. The test method includes: performing read and write operations on the memory, and obtaining a target write mapping value according to the write data through a preset mapping algorithm; through the preset The mapping algorithm obtains a target read mapping value according to the read data, and judges whether there is a fault in the memory by comparing the target reading mapping value with the target writing mapping value. The implementation of the technical scheme of the present invention can save storage space and has wider application range.

Description

technical field [0001] The invention relates to the field of memory testing, in particular to a memory testing method, device and readable memory. Background technique [0002] In the SOC system, with the improvement of integrated circuit integration and complexity, the chip area occupied by the embedded memory is getting larger and larger. Due to the dense transistors in the embedded memory, there are high wiring density, high complexity and high operating frequency, etc. Factors, the failure rate of embedded memory is also increasing, which may lead to a decline in chip yield. Some methods may be used to repair the faulty embedded memory so that it can work normally. Therefore, it is a very important issue to correctly test whether the embedded memory has a fault. [0003] The traditional memory test method is to compare whether the read and write data are the same, and judge whether there is a fault in the memory by comparing the read and write data. If the written data ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/08G11C29/54
CPCG11C29/54G11C29/08
Inventor 孙大鹏
Owner ACTIONS ZHUHAI TECH CO
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More